Microscopic calculation of the electron-phonon interaction in quantum wells H Rücker, E Molinari, P Lugli
Physical Review B 45 (12), 6747, 1992
324 1992 SiGe HBT technology with fT /fmax of 300GHz/500GHz and 2.0 ps CML gate delay B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ...
2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010
314 2010 Half-terahertz sige bicmos technology H Rücker, B Heinemann, A Fox
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2012
268 2012 SiGe HBT with fx/fmax of 505 GHz/720 GHz B Heinemann, H Rücker, R Barth, F Bärwolf, J Drews, GG Fischer, A Fox, ...
2016 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2016
253 2016 A 0.13 H Rucker, B Heinemann, W Winkler, R Barth, J Borngraber, J Drews, ...
IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010
224 2010 Electron-phonon interaction in quasi-two-dimensional systems H Rücker, E Molinari, P Lugli
Physical Review B 44 (7), 3463, 1991
217 1991 Anharmonic Keating model for group-IV semiconductors with application to the lattice dynamics in alloys of Si, Ge, and C H Rücker, M Methfessel
Physical Review B 52 (15), 11059, 1995
212 1995 SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project J Böck, K Aufinger, S Boguth, C Dahl, H Knapp, W Liebl, D Manger, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 121-124, 2015
184 2015 Suppressed diffusion of boron and carbon in carbon-rich silicon H Rücker, B Heinemann, W Röpke, R Kurps, D Krüger, G Lippert, ...
Applied Physics Letters 73 (12), 1682-1684, 1998
181 1998 Strain-stabilized highly concentrated pseudomorphic Si 1− x C x layers in Si H Rücker, M Methfessel, E Bugiel, HJ Osten
Physical review letters 72 (22), 3578, 1994
148 1994 A 0.53 THz reconfigurable source module with up to 1 mW radiated power for diffuse illumination in terahertz imaging applications UR Pfeiffer, Y Zhao, J Grzyb, R Al Hadi, N Sarmah, W Förster, H Rücker, ...
IEEE Journal of Solid-State Circuits 49 (12), 2938-2950, 2014
135 2014 Growth and properties of strained Si1-x-yGexCy layers SC Jain, HJ Osten, B Dietrich, H Rucker
Semiconductor science and technology 10 (10), 1289, 1995
134 1995 Novel collector design for high-speed SiGe: C HBTs B Heinemann, H Rucker, R Barth, J Bauer, D Bolze, E Bugiel, J Drews, ...
Digest. International Electron Devices Meeting,, 775-778, 2002
126 2002 Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ...
Proceedings of the IEEE 105 (6), 1035-1050, 2017
121 2017 High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches B Heinemann, R Barth, D Knoll, H Rücker, B Tillack, W Winkler
Semiconductor Science and Technology 22 (1), S153, 2006
115 2006 SiGe BiCMOS technology with 3.0 ps gate delay H Rucker, B Heinemann, R Barth, J Bauer, K Blum, D Bolze, J Drews, ...
2007 IEEE International Electron Devices Meeting, 651-654, 2007
100 2007 SiGe BiCMOS current status and future trends in Europe P Chevalier, W Liebl, H Rücker, A Gauthier, D Manger, B Heinemann, ...
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
95 2018 14.5 A 0.53 THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13 μm SiGe BiCMOS UR Pfeiffer, Y Zhao, J Grzyb, R Al Hadi, N Sarmah, W Förster, H Rücker, ...
2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014
90 2014 Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology MJ Lee, H Rucker, WY Choi
IEEE Electron Device Letters 33 (1), 80-82, 2011
84 2011 SiGe HBTs and BiCMOS technology for present and future millimeter-wave systems T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ...
IEEE Journal of Microwaves 1 (1), 288-298, 2021
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