Artigos com autorizações de acesso público - Thomas MikolajickSaiba mais
120 artigos não disponíveis publicamente
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
Autorizações: German Research Foundation
Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors
M Hoffmann, U Schroeder, C Künneth, A Kersch, S Starschich, U Böttger, ...
Nano Energy 18, 154-164, 2015
Autorizações: German Research Foundation
Mimicking biological neurons with a nanoscale ferroelectric transistor
H Mulaosmanovic, E Chicca, M Bertele, T Mikolajick, S Slesazeck
Nanoscale 10 (46), 21755-21763, 2018
Autorizações: German Research Foundation
Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering
T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ...
Advanced Materials Interfaces 6 (11), 1900042, 2019
Autorizações: US National Science Foundation, European Commission
Physical model of threshold switching in NbO 2 based memristors
S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ...
RSC advances 5 (124), 102318-102322, 2015
Autorizações: European Commission
The RFET—A reconfigurable nanowire transistor and its application to novel electronic circuits and systems
T Mikolajick, A Heinzig, J Trommer, T Baldauf, WM Weber
Semiconductor Science and Technology 32 (4), 043001, 2017
Autorizações: German Research Foundation
Elementary aspects for circuit implementation of reconfigurable nanowire transistors
J Trommer, A Heinzig, S Slesazeck, T Mikolajick, WM Weber
IEEE electron device letters 35 (1), 141-143, 2013
Autorizações: German Research Foundation
Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors
J Trommer, A Heinzig, T Baldauf, S Slesazeck, T Mikolajick, W Weber
IEEE, 2015
Autorizações: German Research Foundation
Accumulative polarization reversal in nanoscale ferroelectric transistors
H Mulaosmanovic, T Mikolajick, S Slesazeck
ACS applied materials & interfaces 10 (28), 23997-24002, 2018
Autorizações: Fraunhofer-Gesellschaft
Memory technology—a primer for material scientists
T Schenk, M Pešić, S Slesazeck, U Schroeder, T Mikolajick
Reports on Progress in Physics 83 (8), 086501, 2020
Autorizações: German Research Foundation, Luxembourg National Research Fund
Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
WM Weber, T Mikolajick
Reports on Progress in Physics 80 (6), 066502, 2017
Autorizações: German Research Foundation
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch, MH Park, T Mikolajick, U Schroeder
Inorganic Chemistry Frontiers 8 (10), 2650-2672, 2021
Autorizações: German Research Foundation, Federal Ministry of Education and Research, Germany
Silicon nanowires–a versatile technology platform
T Mikolajick, A Heinzig, J Trommer, S Pregl, M Grube, G Cuniberti, ...
physica status solidi (RRL)–Rapid Research Letters 7 (10), 793-799, 2013
Autorizações: German Research Foundation
Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers
M Materano, T Mittmann, PD Lomenzo, C Zhou, JL Jones, M Falkowski, ...
ACS applied electronic materials 2 (11), 3618-3626, 2020
Autorizações: US National Science Foundation, German Research Foundation, Federal Ministry …
Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors
F Mehmood, M Hoffmann, PD Lomenzo, C Richter, M Materano, ...
Advanced Materials Interfaces 6 (21), 1901180, 2019
Autorizações: European Commission
Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications
MH Park, T Schenk, M Hoffmann, S Knebel, J Gärtner, T Mikolajick, ...
Nano Energy 36, 381-389, 2017
Autorizações: German Research Foundation
Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts
X Ou, Y Shuai, W Luo, PF Siles, R Kögler, J Fiedler, H Reuther, S Zhou, ...
ACS applied materials & interfaces 5 (23), 12764-12771, 2013
Autorizações: German Research Foundation
Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films
H Mähne, L Berger, D Martin, V Klemm, S Slesazeck, S Jakschik, ...
Solid-state electronics 72, 73-77, 2012
Autorizações: German Research Foundation
Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
ET Breyer, H Mulaosmanovic, T Mikolajick, S Slesazeck
Applied Physics Letters 118 (5), 2021
Autorizações: European Commission
Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films
X Pan, Y Shuai, C Wu, W Luo, X Sun, H Zeng, S Zhou, R Böttger, X Ou, ...
Applied Physics Letters 108 (3), 2016
Autorizações: National Natural Science Foundation of China
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