Thomas Mikolajick

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Stefan SlesazeckNaMLab gGmbHE-mail confirmado em namlab.com
Walter M. WeberProfessor of Nanoelectronics at TU WienE-mail confirmado em tuwien.ac.at
Halid MulaosmanovicGlobalFoundries Inc.E-mail confirmado em polimi.it
Tony SchenkMember of Technical Staff & Lead of Stack Development at Ferroelectric Memory CompanyE-mail confirmado em ferroelectric-memory.com
Jens TrommerNamlab gGmbHE-mail confirmado em namlab.com
Milan PesicApplied Materials Inc | MDLab/MDLSoft | Namlab | TU DresdenE-mail confirmado em amat.com
Dr. Stefan MuellerCTO at Ferroelectric Memory Company (FMC)E-mail confirmado em ferroelectric-memory.com
Min Hyuk ParkSeoul National UniversityE-mail confirmado em snu.ac.kr
André HeinzigNaMLab, TU DresdenE-mail confirmado em namlab.com
Patrick D LomenzoNanoelectronic Materials Laboratory, NaMLabE-mail confirmado em namlab.com
Dominik MartinFerdinand-Braun-InstitutE-mail confirmado em alumni.tu-berlin.de
Terence MittmannNaMLab gGmbHE-mail confirmado em namlab.com
Monica MateranoR&D Engineer, EYE4NIRE-mail confirmado em eye4nir.com
Evelyn T. Breyer↷E-mail confirmado em tu-dresden.de
Benjamin MaxTU Dresden, Institute for Semiconductor and Microsystems, Chair of NanoelectronicsE-mail confirmado em tu-dresden.de
Matthias GrubeFraunhofer IPMSE-mail confirmado em ipms.fraunhofer.de
Franz P. G. FenglerNaMLab gGmbHE-mail confirmado em namlab.com
Jacob L. JonesMaterials Science & Engineering, North Carolina State UniversityE-mail confirmado em ncsu.edu
Sven BeyerGlobalfoundriesE-mail confirmado em globalfoundries.com
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityE-mail confirmado em snu.ac.kr

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Thomas Mikolajick

Scientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden

E-mail confirmado em namlab.com - Página inicial

semiconductor materials and devices nonvolatile memory microelectronics ferroelectrics GaN


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Ferroelectricity in Simple Binary ZrO₂ and HfO₂ J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ... Nano letters 12 (8), 4318-4323, 2012	1694	2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015	1095	2015
Incipient ferroelectricity in Al‐doped HfO2 thin films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012	847	2012
Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016	794	2016
Ferroelectricity in yttrium-doped hafnium oxide J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ... Journal of Applied Physics 110 (11), 2011	688	2011
Ferroelectric Zr0. 5Hf0. 5O2 thin films for nonvolatile memory applications J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ... Applied Physics Letters 99 (11), 2011	611	2011
Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 2015	568	2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013	539	2013
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30-N35, 2015	531	2015
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017	517	2017
Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Mrs Communications 8 (3), 795-808, 2018	501	2018
Reconfigurable silicon nanowire transistors A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber Nano letters 12 (1), 119-124, 2012	481	2012
2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022	452	2022
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016	417	2016
Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014	401	2014
Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019	396	2019
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO₂ Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016	393	2016
Phase transitions in ferroelectric silicon doped hafnium oxide TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ... Applied Physics Letters 99 (11), 2011	385	2011
The past, the present, and the future of ferroelectric memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020	362	2020
The fundamentals and applications of ferroelectric HfO₂ U Schroeder, MH Park, T Mikolajick, CS Hwang Nature Reviews Materials 7 (8), 653-669, 2022	349	2022

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