The power of myth J Campbell, B Moyers
Anchor, 2011
6383 2011 Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product Y Kang, HD Liu, M Morse, MJ Paniccia, M Zadka, S Litski, G Sarid, ...
Nature photonics 3 (1), 59-63, 2009
724 2009 Microstructured silicon photodetector Z Huang, JE Carey, M Liu, X Guo, E Mazur, JC Campbell
Applied Physics Letters 89 (3), 2006
456 2006 Thermal treatment studies of the photoluminescence intensity of porous silicon C Tsai, KH Li, J Sarathy, S Shih, JC Campbell, BK Hance, JM White
Applied physics letters 59 (22), 2814-2816, 1991
412 1991 Correlation between silicon hydride species and the photoluminescence intensity of porous silicon C Tsai, KH Li, DS Kinosky, RZ Qian, TC Hsu, JT Irby, SK Banerjee, ...
Applied physics letters 60 (14), 1700-1702, 1992
320 1992 Recent advances in telecommunications avalanche photodiodes JC Campbell
Journal of Lightwave Technology 25 (1), 109-121, 2007
292 2007 Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN JC Carrano, T Li, PA Grudowski, CJ Eiting, RD Dupuis, JC Campbell
Journal of applied physics 83 (11), 6148-6160, 1998
290 1998 Electrical and optical characterization of Sb: SnO2 YS He, JC Campbell, RC Murphy, MF Arendt, JS Swinnea
Journal of Materials Research 8 (12), 3131-3134, 1993
284 1993 High detectivity InAs quantum dot infrared photodetectors ET Kim, A Madhukar, Z Ye, JC Campbell
Applied Physics Letters 84 (17), 3277-3279, 2004
274 2004 High-performance avalanche photodiode with separate absorption ‘grading’and multiplication regions JC Campbell, AG Dentai, WS Holden, BL Kasper
Electronics Letters 19 (20), 818-820, 1983
271 1983 Recent advances in avalanche photodiodes JC Campbell, S Demiguel, F Ma, A Beck, X Guo, S Wang, X Zheng, X Li, ...
IEEE Journal of selected topics in quantum electronics 10 (4), 777-787, 2004
250 2004 The HgCdTe electron avalanche photodiode J Beck, C Wan, M Kinch, J Robinson, P Mitra, R Scritchfield, F Ma, ...
Journal of electronic materials 35, 1166-1173, 2006
247 2006 High-saturation-current modified uni-traveling-carrier photodiode with cliff layer Z Li, H Pan, H Chen, A Beling, JC Campbell
IEEE Journal of Quantum Electronics 46 (5), 626-632, 2010
234 2010 GaN avalanche photodiodes JC Carrano, DJH Lambert, CJ Eiting, CJ Collins, T Li, S Wang, B Yang, ...
Applied Physics Letters 76 (7), 924, 2000
230 2000 Recent advances in avalanche photodiodes JC Campbell
Journal of Lightwave Technology 34 (2), 278-285, 2016
220 2016 GaAs electro‐optic directional‐coupler switch JC Campbell, FA Blum, DW Shaw, KL Lawley
Applied Physics Letters 27 (4), 202-205, 1975
196 1975 Demonstration of a 320× 256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors S Krishna, D Forman, S Annamalai, P Dowd, P Varangis, T Tumolillo, ...
Applied Physics Letters 86 (19), 2005
191 2005 Normal incidence Z Chen, O Baklenov, ET Kim, I Mukhametzhanov, J Tie, A Madhukar, Z Ye, ...
Journal of Applied Physics 89 (8), 4558-4563, 2001
187 2001 A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes P Yuan, KA Anselm, C Hu, H Nie, C Lenox, AL Holmes, BG Streetman, ...
IEEE Transactions on Electron Devices 46 (8), 1632-1639, 1999
186 1999 Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz C Lenox, H Nie, P Yuan, G Kinsey, AL Homles, BG Streetman, ...
IEEE Photonics Technology Letters 11 (9), 1162-1164, 1999
182 1999 
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