Artigos com autorizações de acesso público - gang zhangSaiba mais
131 artigos não disponíveis publicamente
Ultrafast and directional diffusion of lithium in phosphorene for high-performance lithium-ion battery
W Li, Y Yang, G Zhang, YW Zhang
Nano letters 15 (3), 1691-1697, 2015
Autorizações: National Natural Science Foundation of China, A*Star, Singapore
Thermal conductivity of amorphous materials
WX Zhou, Y Cheng, KQ Chen, G Xie, T Wang, G Zhang
Advanced Functional Materials 30 (8), 1903829, 2020
Autorizações: National Natural Science Foundation of China, A*Star, Singapore
Thermoelectric properties of two-dimensional transition metal dichalcogenides
G Zhang, YW Zhang
Journal of Materials Chemistry C 5 (31), 7684-7698, 2017
Autorizações: A*Star, Singapore
Phonon thermal conductivity of monolayer MoS2 sheet and nanoribbons
X Liu, G Zhang, QX Pei, YW Zhang
Applied Physics Letters 103 (13), 2013
Autorizações: A*Star, Singapore
Al‐doped black phosphorus p–n homojunction diode for high performance photovoltaic
Y Liu, Y Cai, G Zhang, YW Zhang, KW Ang
Advanced Functional Materials 27 (7), 1604638, 2017
Autorizações: National Natural Science Foundation of China, A*Star, Singapore, National …
Machine learning approaches for thermoelectric materials research
T Wang, C Zhang, H Snoussi, G Zhang
Advanced Functional Materials 30 (5), 1906041, 2020
Autorizações: National Natural Science Foundation of China, A*Star, Singapore
Strain effects on thermoelectric properties of two-dimensional materials
G Zhang, YW Zhang
Mechanics of Materials 91, 382-398, 2015
Autorizações: A*Star, Singapore
Recent advances in the study of phosphorene and its nanostructures
V Sorkin, Y Cai, Z Ong, G Zhang, YW Zhang
Critical Reviews in Solid State and Materials Sciences 42 (1), 1-82, 2017
Autorizações: A*Star, Singapore
Topological Defects at the Graphene/h-BN interface Abnormally Enhance Its Thermal Conductance
X Liu, G Zhang, YW Zhang
Nano letters 16 (8), 4954-4959, 2016
Autorizações: A*Star, Singapore
Few‐layer black phosphorus carbide field‐effect transistor via carbon doping
WC Tan, Y Cai, RJ Ng, L Huang, X Feng, G Zhang, YW Zhang, CA Nijhuis, ...
Advanced Materials 29 (24), 1700503, 2017
Autorizações: A*Star, Singapore, National Research Foundation, Singapore
Substitutionally doped phosphorene: electronic properties and gas sensing
N Suvansinpan, F Hussain, G Zhang, CH Chiu, Y Cai, YW Zhang
Nanotechnology 27 (6), 065708, 2016
Autorizações: A*Star, Singapore
Electronic properties of edge-hydrogenated phosphorene nanoribbons: a first-principles study
W Li, G Zhang, YW Zhang
The Journal of Physical Chemistry C 118 (38), 22368-22372, 2014
Autorizações: A*Star, Singapore
Modulating Carrier Density and Transport Properties of MoS2 by Organic Molecular Doping and Defect Engineering
Y Cai, H Zhou, G Zhang, YW Zhang
Chemistry of Materials 28 (23), 8611-8621, 2016
Autorizações: A*Star, Singapore
Cr 2 TiC 2-based double MXenes: novel 2D bipolar antiferromagnetic semiconductor with gate-controllable spin orientation toward antiferromagnetic spintronics
J He, G Ding, C Zhong, S Li, D Li, G Zhang
Nanoscale 11 (1), 356-364, 2019
Autorizações: National Natural Science Foundation of China
Thermal transport in 2D semiconductors—considerations for device applications
Y Zhao, Y Cai, L Zhang, B Li, G Zhang, JTL Thong
Advanced Functional Materials 30 (8), 1903929, 2020
Autorizações: A*Star, Singapore
Strain-tunable electronic and transport properties of MoS2 nanotubes
W Li, G Zhang, M Guo, YW Zhang
Nano Research 7, 518-527, 2014
Autorizações: A*Star, Singapore
Efficient approach for modeling phonon transmission probability in nanoscale interfacial thermal transport
ZY Ong, G Zhang
Physical Review B 91 (17), 174302, 2015
Autorizações: A*Star, Singapore
Stretch‐driven increase in ultrahigh thermal conductance of hydrogenated borophene and dimensionality crossover in phonon transmission
D Li, J He, G Ding, QQ Tang, Y Ying, J He, C Zhong, Y Liu, C Feng, Q Sun, ...
Advanced Functional Materials 28 (31), 1801685, 2018
Autorizações: National Natural Science Foundation of China
Spin-gapless semiconductors for future spintronics and electronics
X Wang, Z Cheng, G Zhang, H Yuan, H Chen, XL Wang
Physics Reports 888, 1-57, 2020
Autorizações: Australian Research Council, National Natural Science Foundation of China
Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit
G Ding, C Wang, G Gao, K Yao, C Dun, C Feng, D Li, G Zhang
Nanoscale 10 (15), 7077-7084, 2018
Autorizações: National Natural Science Foundation of China
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