International Atomic Energy Agency intercomparison of ion beam analysis software NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
106 2007 Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature G Lulli, PG Merli, MV Antisari
Physical Review B 36 (15), 8038, 1987
93 1987 Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ...
Physical review letters 91 (24), 245502, 2003
92 2003 Summary of “IAEA intercomparison of IBA software” NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
86 2008 Ion implantation induced swelling in 6H-SiC R Nipoti, E Albertazzi, M Bianconi, R Lotti, G Lulli, M Cervera, A Carnera
Applied physics letters 70 (25), 3425-3427, 1997
77 1997 Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra G Lulli, E Albertazzi, M Bianconi, GG Bentini, R Nipoti, R Lotti
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
65 2000 Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison E Albertazzi, M Bianconi, G Lulli, R Nipoti, M Cantiano
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
61 1996 Influence of electron-beam parameters on the radiation-induced formation of graphitic onions G Lulli, A Parisini, G Mattei
Ultramicroscopy 60 (2), 187-194, 1995
55 1995 Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si G Lulli, E Albertazzi, M Bianconi, R Nipoti, M Cervera, A Carnera, ...
Journal of applied physics 82 (12), 5958-5964, 1997
52 1997 Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope F Corticelli, G Lulli, PG Merli
Philosophical magazine letters 61 (3), 101-106, 1990
36 1990 Low-energy recoils in crystalline silicon: Quantum simulations M Mazzarolo, L Colombo, G Lulli, E Albertazzi
Physical Review B 63 (19), 195207, 2001
31 2001 MeV ion implantation induced damage in relaxed A Nylandsted Larsen, C O’Raifeartaigh, RC Barklie, B Holm, F Priolo, ...
Journal of applied physics 81 (5), 2208-2218, 1997
27 1997 Comparison of results and models of solid-phase epitaxial growth of implanted Si layers induced by electron-and ion-beam irradiation G Lulli, PG Merli
Physical Review B 47 (21), 14023, 1993
25 1993 Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation S Balboni, E Albertazzi, M Bianconi, G Lulli
Physical Review B 66 (4), 045202, 2002
24 2002 The Si surface yield as a calibration standard for RBS M Bianconi, F Abel, JC Banks, AC Font, C Cohen, BL Doyle, R Lotti, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
22 2000 Monte Carlo simulation of ion implantation in crystalline SiC E Albertazzi, G Lulli
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
22 1996 Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With G Lulli
IEEE transactions on electron devices 58 (1), 190-194, 2010
20 2010 EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon L Sealy, RC Barklie, G Lulli, R Nipoti, R Balboni, S Milita, M Servidori
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
20 1995 Solid phase epitaxy of implanted silicon by electron irradiation at room temperature G Lulli, PG Merli, MV Antisari
MRS Online Proceedings Library (OPL) 100, 375, 1988
20 1988 Dose rate effects on the dynamic annealing mechanism in P+ ‐implanted silicon M Berti, AV Drigo, G Lulli, PG Merli, MV Antisari3
physica status solidi (a) 97 (1), 77-85, 1986
20 1986 
Marco BianconiCNR-IMME-mail confirmado em bo.imm.cnr.it
