Tomoteru Fukumura

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Yasushi HiroseProfessor, Department of Chemistry, Tokyo Metropolitan UniversityE-mail confirmado em tmu.ac.jp
Kenichi KaminagaThe Advanced Institute for Materials ResearchE-mail confirmado em tohoku.ac.jp
Akira ChikamatsuThe University of TokyoE-mail confirmado em chem.s.u-tokyo.ac.jp
Atsushi FujimoriUniversity of Tokyo & National Tsing Hua UniversityE-mail confirmado em phys.s.u-tokyo.ac.jp
Shoichiro NakaoUniv. of TokyoE-mail confirmado em chem.s.u-tokyo.ac.jp
Ikuhara YUniverfsity of TokyoE-mail confirmado em sigma.t.u-tokyo.ac.jp
Hongtao YuanStanford UniversityE-mail confirmado em stanford.edu
Tomasz DietlInstitute of Physics, Polish Academy of SciencesE-mail confirmado em ifpan.edu.pl
Isao OhkuboNational Institute for Materials Science (NIMS)E-mail confirmado em nims.go.jp
Hongming WengInstitute of Physics, Chinese Academy of SciencesE-mail confirmado em iphy.ac.cn
Ryota TakahashiNihon UniversityE-mail confirmado em nihon-u.ac.jp
Vladimir Z. MordkovichTechnological Institute for Superhard and Novel Carbon MaterialsE-mail confirmado em tisnum.ru
Jinming DongDepartment of Physics, Nanjing University, ChinaE-mail confirmado em nju.edu.cn
Vijay Raj SinghCentral University of South Bihar GayaE-mail confirmado em cusb.ac.in
Hironori NakaoHigh Energy Accelerator Research OrganizationE-mail confirmado em kek.jp
Subhra Sen GuptaDepartment of Physics, School of Natural Sciences, Shiv Nadar University (SNU)E-mail confirmado em snu.edu.in
Dipankar Das Sarma (D D Sarma)Indian Institute of ScienceE-mail confirmado em iisc.ac.in
Masaki MizuguchiNagoya UniversityE-mail confirmado em material.nagoya-u.ac.jp
P. MuruganCSIR Central Electrochemical Research InstituteE-mail confirmado em cecri.res.in
Takeshi Nishimatsusourceforge.netE-mail confirmado em users.sourceforge.net

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Tomoteru Fukumura

Tohoku University

E-mail confirmado em tohoku.ac.jp


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide Y Matsumoto, M Murakami, T Shono, T Hasegawa, T Fukumura, ... Science 291 (5505), 854-856, 2001	3187	2001
An oxide-diluted magnetic semiconductor: Mn-doped ZnO T Fukumura, Z Jin, A Ohtomo, H Koinuma, M Kawasaki Applied physics letters 75 (21), 3366-3368, 1999	919	1999
High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties Z Jin, T Fukumura, M Kawasaki, K Ando, H Saito, T Sekiguchi, YZ Yoo, ... Applied Physics Letters 78 (24), 3824-3826, 2001	769	2001
Magnetic properties of Mn-doped ZnO T Fukumura, Z Jin, M Kawasaki, T Shono, T Hasegawa, S Koshihara, ... Applied Physics Letters 78 (7), 958-960, 2001	752	2001
Magneto-optical properties of ZnO-based diluted magnetic semiconductors K Ando, H Saito, Z Jin, T Fukumura, M Kawasaki, Y Matsumoto, ... Journal of Applied Physics 89 (11), 7284-7286, 2001	567*	2001
Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide Y Yamada, K Ueno, T Fukumura, HT Yuan, H Shimotani, Y Iwasa, L Gu, ... Science 332 (6033), 1065-1067, 2011	546	2011
Modeling and simulation of polycrystalline ZnO thin-film transistors FM Hossain, J Nishii, S Takagi, A Ohtomo, T Fukumura, H Fujioka, ... Journal of Applied Physics 94 (12), 7768-7777, 2003	420	2003
High mobility thin film transistors with transparent ZnO channels J Nishii, FM Hossain, S Takagi, T Aita, K Saikusa, Y Ohmaki, I Ohkubo, ... Japanese journal of applied physics 42 (4A), L347, 2003	396	2003
Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor H Toyosaki, T Fukumura, Y Yamada, K Nakajima, T Chikyow, ... Nature materials 3 (4), 221-224, 2004	317	2004
Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics T Fukumura, Y Yamada, H Toyosaki, T Hasegawa, H Koinuma, ... Applied Surface Science 223 (1-3), 62-67, 2004	297	2004
Magnetic oxide semiconductors T Fukumura, H Toyosaki, Y Yamada Semiconductor Science and Technology 20 (4), S103, 2005	277	2005
Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2 H Kimura, T Fukumura, M Kawasaki, K Inaba, T Hasegawa, H Koinuma Applied Physics Letters 80 (1), 94-96, 2002	258	2002
Ferromagnetism in Co-doped TiO2 rutile thin films grown by laser molecular beam epitaxy Y Matsumoto, R Takahashi, M Murakami, T Koida, XJ Fan, T Hasegawa, ... Japanese Journal of Applied Physics 40 (11B), L1204, 2001	239	2001
Electronic structure of the oxide-diluted magnetic semiconductor Zn 1− x Mn x O T Mizokawa, T Nambu, A Fujimori, T Fukumura, M Kawasaki Physical Review B 65 (8), 085209, 2002	227	2002
S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method YZ Yoo, ZW Jin, T Chikyow, T Fukumura, M Kawasaki, H Koinuma Applied physics letters 81 (20), 3798-3800, 2002	214	2002
Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach T Fukumura, M Ohtani, M Kawasaki, Y Okimoto, T Kageyama, T Koida, ... Applied Physics Letters 77 (21), 3426-3428, 2000	199	2000
Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO M Nakano, T Makino, A Tsukazaki, K Ueno, A Ohtomo, T Fukumura, ... Applied Physics Letters 93 (12), 2008	181	2008
Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films Z Jin, M Murakami, T Fukumura, Y Matsumoto, A Ohtomo, M Kawasaki, ... Journal of crystal growth 214, 55-58, 2000	158	2000
Schottky contact on a ZnO (0001) single crystal with conducting polymer M Nakano, A Tsukazaki, RY Gunji, K Ueno, A Ohtomo, T Fukumura, ... Applied Physics Letters 91 (14), 2007	157	2007
ZnO–CoO solid solution thin films YZ Yoo, T Fukumura, Z Jin, K Hasegawa, M Kawasaki, P Ahmet, ... Journal of Applied physics 90 (8), 4246-4250, 2001	155	2001

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