A 40nm CMOS highly linear 0.4-to-6GHz receiver resilient to 0dBm out-of-band blockers J Borremans, G Mandal, V Giannini, T Sano, M Ingels, B Verbruggen, ...
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 …, 2011
280 * 2011 Low-area active-feedback low-noise amplifier design in scaled digital CMOS J Borremans, P Wambacq, C Soens, Y Rolain, M Kuijk
IEEE Journal of Solid-State Circuits 43 (11), 2422-2433, 2008
223 2008 Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective V Subramanian, B Parvais, J Borremans, A Mercha, D Linten, P Wambacq, ...
IEEE Transactions on Electron Devices 53 (12), 3071-3079, 2006
203 2006 A 2-mm V Giannini, P Nuzzo, C Soens, K Vengattaramane, J Ryckaert, M Goffioul, ...
IEEE Journal of Solid-State Circuits 44 (12), 3486-3498, 2009
161 2009 A 52 GHz phased-array receiver front-end in 90 nm digital CMOS K Scheir, S Bronckers, J Borremans, P Wambacq, Y Rolain
IEEE Journal of Solid-State Circuits 43 (12), 2651-2659, 2008
148 2008 A 0.9 V 0.4–6 GHz harmonic recombination SDR receiver in 28 nm CMOS with HR3/HR5 and IIP2 calibration B van Liempd, J Borremans, E Martens, S Cha, H Suys, B Verbruggen, ...
IEEE Journal of Solid-State Circuits 49 (8), 1815-1826, 2014
131 2014 An ESD-protected DC-to-6GHz 9.7 mW LNA in 90nm digital CMOS J Borremans, P Wambacq, D Linten
2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007
103 2007 A 5 mm M Ingels, V Giannini, J Borremans, G Mandal, B Debaillie, ...
IEEE Journal of Solid-State Circuits 45 (12), 2794-2806, 2010
87 2010 A 5mm2 40nm LP CMOS 0.1-to-3GHz multistandard transceiver M Ingels, V Giannini, J Borremans, G Mandal, B Debaillie, ...
2010 IEEE International Solid-State Circuits Conference-(ISSCC), 458-459, 2010
87 2010 A 2.4 GHz Low-Power Sixth-Order RF Bandpass J Ryckaert, J Borremans, B Verbruggen, L Bos, C Armiento, J Craninckx, ...
IEEE Journal of Solid-State Circuits 44 (11), 2873-2880, 2009
86 2009 A 86 MHz–12 GHz digital-intensive PLL for software-defined radios, using a 6 fJ/step TDC in 40 nm digital CMOS J Borremans, K Vengattaramane, V Giannini, B Debaillie, W Van Thillo, ...
IEEE Journal of Solid-State Circuits 45 (10), 2116-2129, 2010
83 2010 Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs V Subramaniana, B Parvais, J Borremans, A Mercha, D Linten, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
79 2005 VCO design for 60 GHz applications using differential shielded inductors in 0.13 μm CMOS J Borremans, M Dehan, K Scheir, M Kuijk, P Wambacq
2008 IEEE Radio Frequency Integrated Circuits Symposium, 135-138, 2008
73 2008 The potential of FinFETs for analog and RF circuit applications P Wambacq, B Verbruggen, K Scheir, J Borremans, M Dehan, D Linten, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2541-2551, 2007
67 2007 A compact wideband front-end using a single-inductor dual-band VCO in 90 nm digital CMOS J Borremans, A Bevilacqua, S Bronckers, M Dehan, M Kuijk, P Wambacq, ...
IEEE Journal of Solid-State Circuits 43 (12), 2693-2705, 2008
63 2008 A digitally controlled compact 57-to-66GHz front-end in 45nm digital CMOS J Borremans, K Raczkowski, P Wambacq
2009 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2009
60 2009 Imaging sensor with in-pixel amplification J Borremans
US Patent 9,942,502, 2018
58 2018 A low-complexity, low-phase-noise, low-voltage phase-aligned ring oscillator in 90 nm digital CMOS J Borremans, J Ryckaert, C Desset, M Kuijk, P Wambacq, J Craninckx
IEEE journal of solid-state circuits 44 (7), 1942-1949, 2009
57 2009 A multiband LTE SAW-less modulator with− 160dBc/Hz RX-band noise in 40nm LP CMOS V Giannini, M Ingels, T Sano, B Debaillie, J Borremans, J Craninckx
2011 IEEE International Solid-State Circuits Conference, 374-376, 2011
55 2011 Reconfigurable Receiver Architectures J Borremans
US Patent App. 13/105,633, 2011
54 2011 
Jan CraninckxFellow, IMECE-mail confirmado em imec.be
