| Negative capacitance field effect transistor with hysteresis-free sub-60-mV/decade switching J Jo, C Shin IEEE Electron Device Letters 37 (3), 245-248, 2016 | 233 | 2016 |
| Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages A Padilla, CW Yeung, C Shin, C Hu, TJK Liu 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 226 | 2008 |
| Negative capacitance in organic/ferroelectric capacitor to implement steep switching MOS devices J Jo, WY Choi, JD Park, JW Shim, HY Yu, C Shin Nano letters 15 (7), 4553-4556, 2015 | 210 | 2015 |
| Study of random dopant fluctuation effects in germanium-source tunnel FETs N Damrongplasit, C Shin, SH Kim, RA Vega, TJK Liu IEEE transactions on electron devices 58 (10), 3541-3548, 2011 | 175 | 2011 |
| Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V E Ko, JW Lee, C Shin IEEE Electron Device Letters 38 (4), 418-421, 2017 | 126 | 2017 |
| Study of random-dopant-fluctuation (RDF) effects for the trigate bulk MOSFET C Shin, X Sun, TJK Liu IEEE Transactions on Electron Devices 56 (7), 1538-1542, 2009 | 113 | 2009 |
| Vertical tunnel FET: Design optimization with triple metal-gate layers E Ko, H Lee, JD Park, C Shin IEEE Transactions on Electron Devices 63 (12), 5030-5035, 2016 | 108 | 2016 |
| Ultra-thick semi-crystalline photoactive donor polymer for efficient indoor organic photovoltaics SC Shin, CW Koh, P Vincent, JS Goo, JH Bae, JJ Lee, C Shin, H Kim, ... Nano Energy 58, 466-475, 2019 | 92 | 2019 |
| Tri-gate bulk MOSFET design for CMOS scaling to the end of the roadmap X Sun, Q Lu, V Moroz, H Takeuchi, G Gebara, J Wetzel, S Ikeda, C Shin, ... IEEE Electron Device Letters 29 (5), 491-493, 2008 | 82 | 2008 |
| Sub-60-mV/decade negative capacitance FinFET with sub-10-nm hafnium-based ferroelectric capacitor E Ko, H Lee, Y Goh, S Jeon, C Shin IEEE Journal of the Electron Devices Society 5 (5), 306-309, 2017 | 80 | 2017 |
| Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation H Jung, SY Chae, C Shin, BK Min, OS Joo, YJ Hwang ACS Applied Materials & Interfaces 7 (10), 5788-5796, 2015 | 72 | 2015 |
| Variation study of the planar ground-plane bulk MOSFET, SOI FinFET, and trigate bulk MOSFET designs X Sun, V Moroz, N Damrongplasit, C Shin, TJK Liu IEEE transactions on electron devices 58 (10), 3294-3299, 2011 | 72 | 2011 |
| Ferroelectric field‐effect‐transistor integrated with ferroelectrics heterostructure S Baek, HH Yoo, JH Ju, P Sriboriboon, P Singh, J Niu, JH Park, C Shin, ... Advanced Science 9 (21), 2200566, 2022 | 69 | 2022 |
| Variation-aware advanced CMOS devices and SRAM C Shin Springer Netherlands, 2016 | 64 | 2016 |
| Recent studies on supercapacitors with next-generation structures J Sung, C Shin Micromachines 11 (12), 1125, 2020 | 63 | 2020 |
| Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors E Ko, J Shin, C Shin Nano Convergence 5, 1-9, 2018 | 63 | 2018 |
| Study of high-k/metal-gate work-function variation using Rayleigh distribution H Nam, C Shin IEEE Electron Device Letters 34 (4), 532-534, 2013 | 63 | 2013 |
| Performance and area scaling benefits of FD-SOI technology for 6-T SRAM cells at the 22-nm node C Shin, MH Cho, Y Tsukamoto, BY Nguyen, C Mazuré, B Nikolić, TJK Liu IEEE Transactions on electron devices 57 (6), 1301-1309, 2010 | 59 | 2010 |
| Synthesis and characterization of dinuclear europium complexes showing pure red electroluminescence H Jang, CH Shin, BJ Jung, D Kim, HK Shim, Y Do European Journal of Inorganic Chemistry 2006 (4), 718-725, 2006 | 57 | 2006 |
| Current-voltage model for negative capacitance field-effect transistors H Lee, Y Yoon, C Shin IEEE Electron Device Letters 38 (5), 669-672, 2017 | 51 | 2017 |
GwangSik KimSamsung ElectronicsE-mail confirmado em korea.ac.kr