Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization T Gühne, Z Bougrioua, P Vennéguès, M Leroux, M Albrecht
Journal of applied physics 101 (11), 2007
126 2007 Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP (001) H Marchand, P Desjardins, S Guillon, JE Paultre, Z Bougrioua, RYF Yip, ...
Applied physics letters 71 (4), 527-529, 1997
116 1997 Electrical conductivity improvement of Fe doped ZnO nanopowders H Saadi, FIH Rhouma, Z Benzarti, Z Bougrioua, S Guermazi, K Khirouni
Materials Research Bulletin 129, 110884, 2020
112 2020 Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT‐like structures Z Bougrioua, I Moerman, L Nistor, B Van Daele, E Monroy, T Palacios, ...
physica status solidi (a) 195 (1), 93-100, 2003
102 2003 Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on m-plane sapphire by metalorganic vapor phase epitaxy P Vennegues, Z Bougrioua, T Guehne
Japanese Journal of Applied Physics 46 (7R), 4089, 2007
88 2007 Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE Z Bougrioua, M Azize, P Lorenzini, M Laügt, H Haas
physica status solidi (a) 202 (4), 536-544, 2005
75 2005 Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer EP Feltin, Z Bougrioua, G Nataf
US Patent 7,282,381, 2007
63 2007 Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕ GaN heterostructures under small dose gamma irradiation AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 103 (8), 2008
62 2008 Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology K Ziouche, Z Yuan, P Lejeune, T Lasri, D Leclercq, Z Bougrioua
Journal of Microelectromechanical Systems, 2016
61 2016 A planar micro thermoelectric generator with high thermal resistance Z Yuan, K Ziouche, Z Bougrioua, P Lejeune, T Lasri, D Leclercq
Sensors and Actuators A: Physical 221, 67-76, 2015
61 2015 Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission Z Bougrioua, M Laügt, P Vennéguès, I Cestier, T Gühne, E Frayssinet, ...
physica status solidi (a) 204 (1), 282-289, 2007
60 2007 Thermal stability of Pt-and Ni-based Schottky contacts on GaN and Al0. 31Ga0. 69N E Monroy, F Calle, R Ranchal, T Palacios, M Verdu, FJ Sanchez, ...
Semiconductor science and technology 17 (9), L47, 2002
60 2002 Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 105 (7), 2009
52 2009 Magnesium diffusion profile in GaN grown by MOVPE Z Benzarti, I Halidou, Z Bougrioua, T Boufaden, B El Jani
Journal of crystal growth 310 (14), 3274-3277, 2008
51 2008 Anisotropy-induced polarization mixture of surface acoustic waves in J Pedrós, F Calle, J Grajal, RJ Jiménez Riobóo, Y Takagaki, KH Ploog, ...
Physical Review B—Condensed Matter and Materials Physics 72 (7), 075306, 2005
50 2005 Free-carrier mobility in GaN in the presence of dislocation walls JL Farvacque, Z Bougrioua, I Moerman
Physical Review B 63 (11), 115202, 2001
50 2001 Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns Z Bougrioua, P Gibart, E Calleja, U Jahn, A Trampert, J Ristic, M Utrera, ...
Journal of crystal growth 309 (2), 113-120, 2007
43 2007 Material optimisation for AlGaN/GaN HFET applications Z Bougrioua, I Moerman, N Sharma, RH Wallis, J Cheyns, K Jacobs, ...
Journal of crystal growth 230 (3-4), 573-578, 2001
43 2001 On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates P Vennéguès, JM Chauveau, Z Bougrioua, T Zhu, D Martin, N Grandjean
Journal of Applied Physics 112 (11), 2012
40 2012 Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy P Vennegues, Z Bougrioua
Applied physics letters 89 (11), 2006
40 2006 
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceE-mail confirmado em cea.fr