The application of the helicon source to plasma processing AJ Perry, D Vender, RW Boswell Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 322 | 1991 |
Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3 GS Oehrlein, Y Zhang, D Vender, M Haverlag Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (2 …, 1994 | 273 | 1994 |
Numerical modeling of low-pressure RF plasmas D Vender, RW Boswell IEEE transactions on plasma science 18 (4), 725-732, 1990 | 268 | 1990 |
Negative ions in a radio-frequency oxygen plasma E Stoffels, WW Stoffels, D Vender, M Kando, GMW Kroesen, FJ De Hoog Physical Review E 51 (3), 2425, 1995 | 254 | 1995 |
Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3 GS Oehrlein, Y Zhang, D Vender, O Joubert Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (2 …, 1994 | 216 | 1994 |
Collisionless electron heating by capacitive rf sheaths G Gozadinos, MM Turner, D Vender Physical review letters 87 (13), 135004, 2001 | 149 | 2001 |
Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability GS Oehrlein, D Vender, Y Zhang, M Haverlag US Patent 5,798,016, 1998 | 146 | 1998 |
Characterization of the E to H transition in a pulsed inductively coupled plasma discharge with internal coil geometry: bi-stability and hysteresis G Cunge, B Crowley, D Vender, MM Turner Plasma sources science and technology 8 (4), 576, 1999 | 143 | 1999 |
Electron–sheath interaction in capacitive radio‐frequency plasmas D Vender, RW Boswell Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992 | 117 | 1992 |
Charged-species profiles in electronegative radio-frequency plasmas D Vender, WW Stoffels, E Stoffels, GMW Kroesen, FJ De Hoog Physical Review E 51 (3), 2436, 1995 | 98 | 1995 |
Transport of argon ions in an inductively coupled high-density plasma reactor N Sadeghi, M Van De Grift, D Vender, GMW Kroesen, FJ De Hoog Applied physics letters 70 (7), 835-837, 1997 | 64 | 1997 |
Investigation of selective SiO2‐to‐Si etching in an inductively coupled high‐density plasma using fluorocarbon gases FH Bell, O Joubert, GS Oehrlein, Y Zhang, D Vender Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (6 …, 1994 | 64 | 1994 |
Simulations of multipactor‐assisted breakdown in radio frequency plasmas D Vender, HB Smith, RW Boswell Journal of applied physics 80 (8), 4292-4298, 1996 | 60 | 1996 |
Global model of a radiofrequency H2 plasma in DENISE R Zorat, J Goss, D Boilson, D Vender Plasma Sources Science and Technology 9 (2), 161, 2000 | 56 | 2000 |
Plasma ionization through wave-particle interaction in a capacitively coupled radio-frequency discharge D O’Connell, T Gans, D Vender, U Czarnetzki, R Boswell Physics of plasmas 14 (3), 2007 | 55 | 2007 |
An experimental study of breakdown in a pulsed helicon plasma RW Boswell, D Vender Plasma Sources Science and Technology 4 (4), 534, 1995 | 51 | 1995 |
Sidewall passivation during the etching of poly‐Si in an electron cyclotron resonance plasma of HBr M Haverlag, GS Oehrlein, D Vender Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 51 | 1994 |
Anomalous skin effect and collisionless power dissipation in inductively coupled discharges G Cunge, B Crowley, D Vender, MM Turner Journal of Applied Physics 89 (7), 3580-3589, 2001 | 49 | 2001 |
Global model for an rf hydrogen inductive plasma discharge in the deuterium negative ion source experiment including negative ions R Zorat, D Vender Journal of Physics D: Applied Physics 33 (14), 1728, 2000 | 49 | 2000 |
Negative ions in low pressure discharges E Stoffels, WW Stoffels, D Vender, M Haverlag, GMW Kroesen, ... Contributions to Plasma Physics 35 (4‐5), 331-357, 1995 | 48 | 1995 |