Tony Schenk

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Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenE-mail confirmado em namlab.com
Min Hyuk ParkSeoul National UniversityE-mail confirmado em snu.ac.kr
Milan PesicApplied Materials Inc | MDLab/MDLSoft | Namlab | TU DresdenE-mail confirmado em amat.com
James LeBeauAssociate Professor, Massachusetts Institute of TechnologyE-mail confirmado em mit.edu
Christoph AdelmannImecE-mail confirmado em imec.be
Stefan SlesazeckNaMLab gGmbHE-mail confirmado em namlab.com
Franz P. G. FenglerNaMLab gGmbHE-mail confirmado em namlab.com
Jacob L. JonesMaterials Science & Engineering, North Carolina State UniversityE-mail confirmado em ncsu.edu
Dominik MartinFerdinand-Braun-InstitutE-mail confirmado em alumni.tu-berlin.de
Sergei V. KalininWeston Fulton Chair Professor, UT Knoxville. Chief Scientist, AI/ML for Physical Sciences, PNNLE-mail confirmado em utk.edu
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Robin MaterlikHochschule MünchenE-mail confirmado em hm.edu
Chris M. FancherMaterial Science and Technology Division, Oak Ridge National LabE-mail confirmado em ornl.gov
Dr. Stefan MuellerCTO at Ferroelectric Memory Company (FMC)E-mail confirmado em ferroelectric-memory.com
Sergej StarschichIWE 2, RWTH Aachen UniversityE-mail confirmado em iwe.rwth-aachen.de
Chuanzhen ZhouAnalytical Instrumentation Facility at NC State UniversityE-mail confirmado em ncsu.edu
Alexei GruvermanCharles Mach University Professor of Physics, University of NebraskaE-mail confirmado em unl.edu
Sebastjan GlinšekLuxembourg Institute of Science and TechnologyE-mail confirmado em list.lu
Emmanuel DefayLuxembourg Institute of Science and TechnologyE-mail confirmado em list.lu
Christopher KuennethAssistant Professor, University of BayreuthE-mail confirmado em uni-bayreuth.de

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Tony Schenk

Member of Technical Staff & Lead of Stack Development at Ferroelectric Memory Company

E-mail confirmado em ferroelectric-memory.com - Página inicial

ferroelectrics HfO2 structural characterization electrical characterization


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016	794	2016
On the structural origins of ferroelectricity in HfO2 thin films X Sang, ED Grimley, T Schenk, U Schroeder, JM LeBeau Applied Physics Letters 106 (16), 2015	630	2015
Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 072006, 2015	568	2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013	509	2013
Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014	401	2014
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO₂ Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016	393	2016
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films D Zhou, J Xu, Q Li, Y Guan, F Cao, X Dong, J Müller, T Schenk, ... Applied Physics Letters 103 (19), 2013	391	2013
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017	349	2017
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ... Inorganic chemistry 57 (5), 2752-2765, 2018	326	2018
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ... Journal of Materials Chemistry C 5 (19), 4677-4690, 2017	315	2017
Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pešić, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015	254	2015
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ... Applied Physics Letters 104 (9), 2014	235	2014
About the deformation of ferroelectric hystereses T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ... Applied Physics Reviews 1 (4), 041103, 2014	217	2014
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films S Starschich, T Schenk, U Schroeder, U Boettger Applied Physics Letters 110 (18), 2017	192	2017
Electric field cycling behavior of ferroelectric hafnium oxide T Schenk, U Schroeder, M Pešić, M Popovici, YV Pershin, T Mikolajick ACS applied materials & interfaces 6 (22), 19744-19751, 2014	192	2014
Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ... Advanced Materials 26 (48), 8198-8202, 2014	186	2014
Si doped hafnium oxide—A “fragile” ferroelectric system C Richter, T Schenk, MH Park, FA Tscharntke, ED Grimley, JM LeBeau, ... Advanced Electronic Materials 3 (10), 1700131, 2017	179	2017
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂ ED Grimley, T Schenk, T Mikolajick, U Schroeder, JM LeBeau Advanced Materials Interfaces 5 (5), 1701258, 2018	157	2018
Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015	149	2015
Ferroelectricity in doped hafnium oxide: materials, properties and devices U Schroeder, CS Hwang, H Funakubo Woodhead Publishing, 2019	147	2019

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