Peter Kratzer

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Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-GesellschaftE-mail confirmado em fhi-berlin.mpg.de
Sung SakongUlm UniversityE-mail confirmado em uni-ulm.de
Evgeni PenevRice UniversityE-mail confirmado em rice.edu
Bjørk HammerAarhusE-mail confirmado em phys.au.dk
Anders mikkelsenProfessor, Department of Physics, Lund UniversityE-mail confirmado em sljus.lu.se
Juliana M. MorbecLecturer in Physics, School of Chemical and Physical Sciences, Keele University, EnglandE-mail confirmado em keele.ac.uk
Thomas HammerschmidtLecturer, ICAMS, Ruhr University Bochum, GermanyE-mail confirmado em rub.de
S. Javad HashemifarDepartment of Physics, Isfahan University of TechnologyE-mail confirmado em cc.iut.ac.ir
Vincent P. LaBellaUniversity at Albany SUNYE-mail confirmado em albany.edu
Giovanni CostantiniProfessor in Physical Chemistry, University of BirminghamE-mail confirmado em bham.ac.uk
roberto santopreteL'OréalE-mail confirmado em rd.loreal.com
Ulrich HöferProfessor für Experimentalphysik, Philipps-Universität MarburgE-mail confirmado em physik.uni-marburg.de
Jens NorskovTechnical University of DenmarkE-mail confirmado em dtu.dk
Rodrigo B. CapazDirector, Brazilian Nanotechnology National Laboratory (LNNano/CNPEM)E-mail confirmado em if.ufrj.br
Edvin LundgrenProfessor, Lund UniversityE-mail confirmado em sljus.lu.se
Rita MAGRIUniversity of Modena and Reggio EmiliaE-mail confirmado em unimore.it
Alexei ZakharovReseacher, MAX-laboratoryE-mail confirmado em maxiv.lu.se
Klaus KernMax-Planck-Institute for Solid State Research and Ecole Polytechnique Fédérale de LausanneE-mail confirmado em fkf.mpg.de
Eckart HasselbrinkProfessor of Physical Chemistry, Universität Duisburg-EssenE-mail confirmado em Uni-DuE.de
Paul M. ThibadoProfessor, Physics, University of ArkansasE-mail confirmado em uark.edu

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Peter Kratzer

University of Duisburg-Essen

E-mail confirmado em uni-due.de - Página inicial

Condensed matter theory


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
A theoretical study of CH4 dissociation on pure and gold‐alloyed Ni (111) surfaces P Kratzer, B Hammer, JK Norskov The Journal of chemical physics 105 (13), 5595-5604, 1996	322	1996
Preserving the Half-Metallicity at the Heusler Alloy Co2MnSi(001) Surface: A Density Functional Theory Study SJ Hashemifar, P Kratzer, M Scheffler Physical review letters 94 (9), 096402, 2005	227	2005
Atomic structure of the GaAs (001)−(2× 4) surface resolved using scanning tunneling microscopy and first-principles theory VP LaBella, H Yang, DW Bullock, PM Thibado, P Kratzer, M Scheffler Physical Review Letters 83 (15), 2989, 1999	219	1999
Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy LG Wang, P Kratzer, M Scheffler, N Moll Physical review letters 82 (20), 4042, 1999	174	1999
Size, shape, and stability of InAs quantum dots on the GaAs (001) substrate LG Wang, P Kratzer, N Moll, M Scheffler Physical Review B 62 (3), 1897, 2000	156	2000
Magnetism in C-or N-doped MgO and ZnO: a density-functional study of impurity pairs H Wu, A Stroppa, S Sakong, S Picozzi, M Scheffler, P Kratzer Physical review letters 105 (26), 267203, 2010	143	2010
The basics of electronic structure theory for periodic systems P Kratzer, J Neugebauer Frontiers in chemistry 7, 106, 2019	141	2019
Effect of the cluster size in modeling the desorption and dissociative adsorption on Si(001) E Penev, P Kratzer, M Scheffler The Journal of chemical physics 110 (8), 3986-3994, 1999	137	1999
Highly site-specific H 2 adsorption on vicinal Si (001) surfaces P Kratzer, E Pehlke, M Scheffler, MB Raschke, U Höfer Physical review letters 81 (25), 5596, 1998	130	1998
Effect of strain on surface diffusion in semiconductor heteroepitaxy E Penev, P Kratzer, M Scheffler Physical Review B 64 (8), 085401, 2001	129	2001
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots R Santoprete, B Koiller, RB Capaz, P Kratzer, QKK Liu, M Scheffler Physical Review-Section B-Condensed Matter 68 (23), 235311-235311, 2003	128	2003
First-principles studies of kinetics in epitaxial growth of III–V semiconductors P Kratzer, E Penev, M Scheffler Applied Physics A 75, 79-88, 2002	127	2002
Role of electronic correlation in the Si (100) reconstruction: a quantum Monte Carlo study SB Healy, C Filippi, P Kratzer, E Penev, M Scheffler Physical Review Letters 87 (1), 016105, 2001	127	2001
Arsenic dimer dynamics during MBE growth: theoretical evidence for a novel chemisorption state of As 2 molecules on GaAs surfaces CG Morgan, P Kratzer, M Scheffler Physical review letters 82 (24), 4886, 1999	123	1999
Geometric and electronic factors determining the differences in reactivity of H2 on Cu (100) and Cu (111) P Kratzer, B Hammer, JK Nørskov Surface science 359 (1-3), 45-53, 1996	120	1996
Probing interface electronic structure with overlayer quantum-well resonances: Al/Si (111) L Aballe, C Rogero, P Kratzer, S Gokhale, K Horn Physical review letters 87 (15), 156801, 2001	118	2001
Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors P Kratzer, M Scheffler Physical review letters 88 (3), 036102, 2002	117	2002
Reaction dynamics of molecular hydrogen on silicon surfaces P Bratu, W Brenig, A Gro, M Hartmann, U Höfer, P Kratzer, R Russ Physical Review B 54 (8), 5978, 1996	115	1996
Highly excited molecules from Eley-Rideal reactions P Kratzer, W Brenig Surface science 254 (1-3), 275-280, 1991	114	1991
Shape transition during epitaxial growth of quantum dots on : Theory and experiment P Kratzer, QKK Liu, P Acosta-Diaz, C Manzano, G Costantini, ... Physical Review B—Condensed Matter and Materials Physics 73 (20), 205347, 2006	112	2006

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