| Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ... IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2014 | 72 | 2014 |
| Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ... IEEE electron device letters 34 (5), 683-685, 2013 | 50 | 2013 |
| Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ... Microelectronics Reliability 54 (4), 682-697, 2014 | 49 | 2014 |
| Semi-analytical model for the transient operation of gate-all-around charge-trap memories SM Amoroso, CM Compagnoni, A Mauri, A Maconi, AS Spinelli, ... IEEE transactions on electron devices 58 (9), 3116-3123, 2011 | 41 | 2011 |
| Physical modeling for programming of TANOS memories in the Fowler–Nordheim regime CM Compagnoni, A Mauri, SM Amoroso, A Maconi, AS Spinelli IEEE transactions on electron devices 56 (9), 2008-2015, 2009 | 38 | 2009 |
| A survey of carbon nanotube interconnects for energy efficient integrated circuits A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ... IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017 | 37 | 2017 |
| Comprehensive investigation of statistical effects in nitride memories—Part I: Physics-based modeling A Mauri, CM Compagnoni, SM Amoroso, A Maconi, A Ghetti, AS Spinelli, ... IEEE transactions on electron devices 57 (9), 2116-2123, 2010 | 35 | 2010 |
| Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ... IEEE transactions on electron devices 60 (2), 833-839, 2012 | 34 | 2012 |
| Impact of nonuniform doping on random telegraph noise in flash memory devices A Ghetti, SM Amoroso, A Mauri, CM Compagnoni IEEE transactions on electron devices 59 (2), 309-315, 2011 | 32 | 2011 |
| Experimental and simulation study of silicon nanowire transistors using heavily doped channels VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ... IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017 | 27 | 2017 |
| Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ... IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015 | 26 | 2015 |
| Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ... IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015 | 26 | 2015 |
| Three-dimensional simulation of charge-trap memory programming—Part I: Average behavior SM Amoroso, A Maconi, A Mauri, CM Compagnoni, AS Spinelli, ... IEEE transactions on electron devices 58 (7), 1864-1871, 2011 | 25 | 2011 |
| Problems with the continuous doping TCAD simulations of decananometer CMOS transistors A Asenov, F Adamu-Lema, X Wang, SM Amoroso IEEE Transactions on Electron Devices 61 (8), 2745-2751, 2014 | 23 | 2014 |
| 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov IEEE transactions on electron devices 60 (12), 4008-4013, 2013 | 22 | 2013 |
| RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov Solid-State Electronics 84, 120-126, 2013 | 22 | 2013 |
| Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013 | 22 | 2013 |
| A worst-case analysis of trap-assisted tunneling leakage in DRAM using a machine learning approach J Lee, P Asenov, M Aldegunde, SM Amoroso, AR Brown, V Moroz IEEE Electron Device Letters 42 (2), 156-159, 2020 | 21 | 2020 |
| Performance and variability of doped multithreshold FinFETs for 10-nm CMOS F Adamu-Lema, X Wang, SM Amoroso, C Riddet, B Cheng, L Shifren, ... IEEE Transactions on Electron Devices 61 (10), 3372-3378, 2014 | 20 | 2014 |
| 3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories SM Amoroso, A Maconi, A Mauri, CM Compagnoni, E Greco, E Camozzi, ... 2010 International Electron Devices Meeting, 22.6. 1-22.6. 4, 2010 | 20 | 2010 |
