Artigos com autorizações de acesso público - Salvatore Maria AmorosoSaiba mais
2 artigos não disponíveis publicamente
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
Autorizações: European Commission
Investigation of Random Telegraph Noise Under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash
X Jia, L Jin, W Zhou, J Lu, SM Amoroso, AR Brown, KH Lee, P Asenov, ...
IEEE Electron Device Letters 43 (6), 878-881, 2022
Autorizações: National Natural Science Foundation of China
17 artigos disponíveis publicamente
Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization
A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ...
IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2014
Autorizações: UK Engineering and Physical Sciences Research Council
A survey of carbon nanotube interconnects for energy efficient integrated circuits
A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ...
IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017
Autorizações: Fraunhofer-Gesellschaft, European Commission
Experimental and simulation study of silicon nanowire transistors using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ...
IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017
Autorizações: UK Engineering and Physical Sciences Research Council, European Commission
Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
Autorizações: National Natural Science Foundation of China
Variability study of MWCNT local interconnects considering defects and contact resistances—Part I: Pristine MWCNT
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices 65 (11), 4955-4962, 2018
Autorizações: European Commission
Progress on carbon nanotube BEOL interconnects
B Uhlig, J Liang, J Lee, R Ramos, A Dhavamani, N Nagy, J Dijon, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 937-942, 2018
Autorizações: European Commission
3d multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
C Sampedro, L Donetti, F Gamiz, A Godoy, FJ Garcia-Ruiz, VP Georgiev, ...
2014 International conference on simulation of semiconductor processes and …, 2014
Autorizações: Government of Spain
Multi-subband ensemble Monte Carlo simulation of Si nanowire MOSFETs
L Donetti, C Sampedro, F Gámiz, A Godoy, FJ García-Ruíz, E Towiez, ...
2015 International conference on simulation of semiconductor processes and …, 2015
Autorizações: Government of Spain
Comparison between bulk and FDSOI POM flash cell: A multiscale simulation study
VP Georgiev, SM Amoroso, TM Ali, L Vilà-Nadal, C Busche, L Cronin, ...
IEEE Transactions on Electron Devices 62 (2), 680-684, 2014
Autorizações: UK Engineering and Physical Sciences Research Council
Variability study of MWCNT local interconnects considering defects and contact resistances—Part II: Impact of charge transfer doping
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices 65 (11), 4963-4970, 2018
Autorizações: European Commission
FDSOI molecular flash cell with reduced variability for low power flash applications
VP Georgiev, SM Amoroso, L Vilà-Nadal, C Busche, L Cronin, A Asenov
2014 44th European Solid State Device Research Conference (ESSDERC), 353-356, 2014
Autorizações: UK Engineering and Physical Sciences Research Council
Challenges and progress on carbon nanotube integration for beol interconnects
B Uhlig, A Dhavamani, N Nagy, K Lilienthal, R Liske, R Ramos, J Dijon, ...
2018 IEEE International Interconnect Technology Conference (IITC), 16-18, 2018
Autorizações: European Commission
Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu, FA Lema, SM Amoroso, E Towie, ...
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-3, 2016
Autorizações: UK Engineering and Physical Sciences Research Council, European Commission
Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology
J Lee, J Liang, SM Amoroso, T Sadi, L Wang, F Asenov, A Pender, ...
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
Autorizações: European Commission
Comparison of Si< 100> and< 110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations
L Gerrer, V Georgiev, SM Amoroso, E Towie, A Asenov
Microelectronics Reliability 55 (9-10), 1307-1312, 2015
Autorizações: UK Engineering and Physical Sciences Research Council
3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability
L Gerrer, S Amoroso, R Hussin, F Adamu-Lema, A Asenov
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
Autorizações: UK Engineering and Physical Sciences Research Council
3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors
V Georgiev, S Amoroso, A Asenov
Autorizações: Government of Spain
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