| Photoelectric plasticity in oxide thin film transistors with tunable synaptic functions Q Wu, J Wang, J Cao, C Lu, G Yang, X Shi, X Chuai, Y Gong, Y Su, ... Advanced Electronic Materials 4 (12), 1800556, 2018 | 142 | 2018 |
| Sub-thermionic, ultra-high-gain organic transistors and circuits Z Luo, B Peng, J Zeng, Z Yu, Y Zhao, J Xie, R Lan, Z Ma, L Pan, K Cao, ... Nature Communications 12 (1), 1928, 2021 | 125 | 2021 |
| Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric Y Li, YL Pei, RQ Hu, ZM Chen, Y Zhao, Z Shen, BF Fan, J Liang, G Wang Current Applied Physics 14 (7), 941-945, 2014 | 84 | 2014 |
| A compact model for drift and diffusion memristor applied in neuron circuits design Y Zhao, C Fang, X Zhang, X Xu, T Gong, Q Luo, C Chen, Q Liu, H Lv, Q Li, ... IEEE Transactions on Electron Devices 65 (10), 4290-4296, 2018 | 30 | 2018 |
| Study of positive-gate-bias-induced hump phenomenon in amorphous indium–gallium–zinc oxide thin-film transistors X Shi, C Lu, X Duan, Q Chen, H Ji, Y Su, X Chuai, D Liu, Y Zhao, G Yang, ... IEEE Transactions on Electron Devices 67 (4), 1606-1612, 2020 | 21 | 2020 |
| Surface‐Doping‐Induced Mobility Modulation Effect for Transport Enhancement in Organic Single‐Crystal Transistors Y Shan, J Wang, Z Guo, D Liu, Y Zhao, N Lu, L Li Advanced Materials 35 (3), 2205517, 2023 | 15 | 2023 |
| Analytical surface potential-based compact model for independent dual gate a-IGZO TFT J Guo, Y Zhao, G Yang, X Chuai, W Lu, D Liu, Q Chen, X Duan, S Huang, ... IEEE Transactions on Electron Devices 68 (4), 2049-2055, 2021 | 14 | 2021 |
| Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics G Yang, X Chuai, J Niu, J Wang, X Shi, Q Wu, Y Su, Y Zhao, D Liu, G Xu, ... IEEE Electron Device Letters 40 (2), 232-235, 2018 | 12 | 2018 |
| A new surface potential based compact model for independent dual gate a-IGZO TFT: Experimental verification and circuit demonstration J Guo, Y Zhao, G Yang, X Chuai, W Lu, D Liu, Q Chen, X Duan, S Huang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2020 | 10 | 2020 |
| Surface potential-based compact model for negative capacitance FETs compatible for logic circuit: with time dependence and multidomain interaction Y Zhao, L Li, Y Peng, Q Li, G Yang, X Chuai, Q Li, G Han, M Liu 2019 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2019 | 10 | 2019 |
| Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device Y Zhao, J Wang Micromachines 13 (5), 707, 2022 | 9 | 2022 |
| A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes Y Zhao, L Wang, Z Wu, F Schanovsky, X Xu, H Yang, H Yu, J Lai, D Liu, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 9 | 2021 |
| Scaling MoS2 NCFET to 83 nm with Record-low Ratio of SSave/SSRef.=0.177 and Minimum 20 mV Hysteresis G Yang, J Niu, C Lu, R Cao, J Wang, Y Zhao, X Chuai, M Li, D Geng, N Lu, ... 2020 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2020 | 8 | 2020 |
| Optimization of Electrical Properties of MoS2 Field‐Effect Transistors by Dipole Layer Coulombic Interaction With Trap States X Chuai, G Yang, W Wei, J Wang, X Shi, C Lu, Y Zhao, Y Su, Q Wu, ... physica status solidi (RRL)–Rapid Research Letters 13 (7), 1900007, 2019 | 7 | 2019 |
| High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer Z Bai, Y Zhao, J Wang, D Liu, Y Shan, Z Guo, Y Kai, K Hu, C Lu, N Lu, ... Applied Physics Letters 121 (26), 2022 | 5 | 2022 |
| Dynamic time evolutionary aging analysis for device-circuit lifetime estimation of thin-film transistors Y Su, D Geng, Y Gong, G Yang, X Chuai, Y Zhao, X Shi, L Zhang, N Lu, ... IEEE Electron Device Letters 40 (9), 1439-1442, 2019 | 5 | 2019 |
| High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric Y Kai, Y Zhao, J Wang, C Lu, Y Shan, Z Guo, C Jiang, L Li IEEE Electron Device Letters 43 (10), 1681-1684, 2022 | 3 | 2022 |
| Decoupling the Roles of Thermionic and Field Emissions in Contact Resistance of Field Effect Transistors D Liu, G Yang, Y Zhao, N Lu, J Wang, L Li IEEE Electron Device Letters 43 (7), 1065-1068, 2022 | 1 | 2022 |