Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92 (23), 2008
480 2008 Reconfigurable Skyrmion Logic Gates S Luo, M Song, X Li, Y Zhang, J Hong, X Yang, X Zou, N Xu, L You
ACS Nano Letters, 2018
312 2018 Oxide-based RRAM switching mechanism: A new ion-transport-recombination model B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
188 2008 Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor science and technology 23 (7), 075019, 2008
178 2008 Resistive Switching in X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma
IEEE electron device letters 30 (4), 334-336, 2009
131 2009 Mr-gnn: Multi-resolution and dual graph neural network for predicting structured entity interactions N Xu, P Wang, L Chen, J Tao, J Zhao
arXiv preprint arXiv:1905.09558, 2019
127 2019 A unified physical model of switching behavior in oxide-based RRAM N Xu, B Gao, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu
2008 Symposium on VLSI Technology, 100-101, 2008
124 2008 Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices B Sun, YX Liu, LF Liu, N Xu, Y Wang, XY Liu, RQ Han, JF Kang
Journal of Applied Physics 105 (6), 2009
118 2009 A spin–orbit‐torque memristive device S Zhang, S Luo, N Xu, Q Zou, M Song, J Yun, Q Luo, Z Guo, R Li, W Tian, ...
Advanced Electronic Materials 5 (4), 1800782, 2019
79 2019 Spintronic Leaky-Integrate-Fire Spiking Neurons with Self-Reset and Winner-Take-All for Neuromorphic Computing D Wang, R Tang, H Lin, L Liu, N Xu, Y Sun, X Zhao, Z Wang, D Wang, ...
Nature Communications, 2023
57 2023 Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications N Xu, J Sun, IR Chen, L Hutin, Y Chen, J Fujiki, C Qian, TJK Liu
Electron Devices Meeting (IEDM), 2014 IEEE International, 28.8. 1-28.8. 4, 2014
55 2014 Effectiveness of stressors in aggressively scaled FinFETs N Xu, B Ho, M Choi, V Moroz, TJK Liu
IEEE Transactions on Electron Devices 59 (6), 1592-1598, 2012
54 2012 Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications S Luo, N Xu, Z Guo, Y Zhang, J Hong, L You
IEEE Electron Device Letters, 2019
53 2019 Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor N Xu, KJ Yoon, KM Kim, L Fang, CS Hwang
Advanced Electronic Materials 4 (11), 1800189, 2018
53 2018 Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs H Jiang, N Xu, B Chen, L Zeng, Y He, G Du, X Liu, X Zhang
Semiconductor Science and Technology 29 (11), 115021, 2014
50 2014 ZrO2 Ferroelectric FET for Non-volatile Memory Application H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ...
IEEE Electron Device Letters, 2019
49 2019 Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs H Jiang, X Liu, N Xu, Y He, G Du, X Zhang
IEEE Electron Device Letters 36 (12), 1258-1260, 2015
42 2015 Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects XW Jiang, J Gong, N Xu, SS Li, J Zhang, Y Hao, LW Wang
Applied Physics Letters 104 (2), 2014
40 2014 Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices RQH Li-Feng Liu, Jin-Feng Kang, Nuo Xu, Xiao Sun, Chen Chen, Bing Sun, Yi ...
Japanese Journal of Applied Physics 47 (4), 2701-2703, 2008
40 2008 Carrier-mobility enhancement via strain engineering in future thin-body MOSFETs N Xu, B Ho, F Andrieu, L Smith, BY Nguyen, O Weber, T Poiroux, ...
IEEE electron device letters 33 (3), 318-320, 2012
37 2012 
Xiao SunX.AI, Meta, IBM Yorktown Heights, Yale PhD' 13Zweryfikowany adres z us.ibm.com