Artykuły udostępnione publicznie: - Nuo XuWięcej informacji
Niedostępne w żadnym miejscu: 14
Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications
S Luo, N Xu, Z Guo, Y Zhang, J Hong, L You
IEEE Electron Device Letters, 2019
Upoważnienia: National Natural Science Foundation of China
ZrO2 Ferroelectric FET for Non-volatile Memory Application
H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ...
IEEE Electron Device Letters, 2019
Upoważnienia: National Natural Science Foundation of China
Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, Q Sun, W Zhang, ...
IEEE Electron Device Letters, 2019
Upoważnienia: National Natural Science Foundation of China
Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect-Transistors
J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, Q Sun, W Zhang, ...
IEEE Transactions on Electron Devices, 2019
Upoważnienia: National Natural Science Foundation of China
Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior
Y Peng, W Xiao, G Han, J Wu, H Liu, Y Liu, N Xu, TJK Liu, Y Hao
IEEE Electron Device Letters, 2019
Upoważnienia: National Natural Science Foundation of China
Optimal Tuning of Memristor Conductance Variation in Spiking Neural Networks for Online Unsupervised Learning
B Chen, H Yang, F Zhuge, Y Li, TC Chang, Y He, W Yang, N Xu, ...
IEEE Transactions on Electron Devices, 2019
Upoważnienia: National Natural Science Foundation of China
Reconfigurable Physical Unclonable Function Based on Spin-Orbit Torque Induced Chiral Domain Wall Motion
Z Cao, S Zhang, J Zhang, N Xu, R Li, Z Guo, J Yun, M Song, Q Zou, ...
IEEE Electron Device Letters, 2021
Upoważnienia: National Natural Science Foundation of China
Thermally Assisted Skyrmion Memory (TA-SKM)
S Luo, N Xu, J Hong, L You
IEEE Electron Device Letters, 2020
Upoważnienia: National Natural Science Foundation of China
An Euler-Lagrange Equation Oriented Solution for Write Energy Minimization of STT-MRAM
B Chen, S Gao, Y Qu, N Xu, Y Zhao
IEEE Transactions on Electron Devices, 2019
Upoważnienia: National Natural Science Foundation of China
Piezoelectric Tunnel FETs with a Steep-Slope
Y Long, J Huang, Q Huang, N Xu, X Jiang, R Niu, Zhichuan, Huang, S Li
IEEE Electron Device Letters, 2020
Upoważnienia: Chinese Academy of Sciences
Effect of Measurement Speed (µs-800ps) on The Characterization of Reliability Behaviors for FDSOI nMOSFETs
Y Qu, R Cheng, W Liu, J Li, BY Nguyen, O Faynot, N Xu, B Chen, Y Zhao
Reliability Physics Symposium (IRPS), 2018 IEEE International, 2018
Upoważnienia: National Natural Science Foundation of China
Bias and Geometry Dependence of TID Effects in SOI FinFETs
Z Ren, X An, G Li, R Wang, N Xu, X Zhang, R Huang
Semiconductor Science and Technology, 2020
Upoważnienia: National Natural Science Foundation of China
Exploring the Designs of P-type Piezoelectric FinFETs based on NEGF Transport Simulations Comprising Phonon Scattering
Y Long, JZ Huang, Q Huang, N Xu, X Jiang, ZC Niu, D Esseni, R Huang, ...
IEEE Transactions on Electron Devices, 2019
Upoważnienia: Chinese Academy of Sciences
Ultra-Low Power Nano-electromechanical Switch Realized by Controlled and Reversible Crack
L You, Q Luo, Z Guo, S Zhang, Q Zou, X Jiang, N Xu, H Wang, M Song, ...
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S …, 2018
Upoważnienia: National Natural Science Foundation of China
Dostępne w jakimś miejscu: 24
Reconfigurable Skyrmion Logic Gates
S Luo, M Song, X Li, Y Zhang, J Hong, X Yang, X Zou, N Xu, L You
ACS Nano Letters, 2018
Upoważnienia: National Natural Science Foundation of China
A spin–orbit‐torque memristive device
S Zhang, S Luo, N Xu, Q Zou, M Song, J Yun, Q Luo, Z Guo, R Li, W Tian, ...
Advanced Electronic Materials 5 (4), 1800782, 2019
Upoważnienia: National Natural Science Foundation of China
Spintronic Leaky-Integrate-Fire Spiking Neurons with Self-Reset and Winner-Take-All for Neuromorphic Computing
D Wang, R Tang, H Lin, L Liu, N Xu, Y Sun, X Zhao, Z Wang, D Wang, ...
Nature Communications, 2023
Upoważnienia: Chinese Academy of Sciences, National Natural Science Foundation of China
Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs
H Jiang, X Liu, N Xu, Y He, G Du, X Zhang
IEEE Electron Device Letters 36 (12), 1258-1260, 2015
Upoważnienia: National Natural Science Foundation of China
Implementation of Highly Reliable and Energy-Efficient Non-Volatile In-Memory Computing Using Multi-State Domain Wall Spin-Orbit Torque Device
H Lin, N Xu, D Wang, L Liu, X Zhao, Y Zhou, G Yu, G Xing
Advanced Intelligent Systems, 2022
Upoważnienia: Chinese Academy of Sciences, National Natural Science Foundation of China
Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs with Sub-kT/q Swing
Y Peng, W Xiao, G Han, J Wu, H Liu, Y Liu, N Xu, TJK Liu, Y Hao
IEEE Electron Device Letters, 2019
Upoważnienia: National Natural Science Foundation of China
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