| Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy XM Lu, Y Izumi, M Koyama, Y Nakata, S Adachi, S Muto Journal of Crystal Growth 322 (1), 6-9, 2011 | 13 | 2011 |
| Fabrication of two-color surface emitting device of a coupled vertical cavity structure with InAs quantum dots formed by wafer bonding H Ota, X Lu, N Kumagai, T Kitada, T Isu Japanese Journal of Applied Physics 55 (4S), 04EH09, 2016 | 12 | 2016 |
| Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity NKTI Takahiro Kitada, Hiroto Ota, Xiangmeng Lu Applied Physics Express 9 (11), 111201, 2016 | 11 | 2016 |
| Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113) B GaAs substrates X Lu, N Kumagai, Y Minami, T Kitada Applied Physics Express 11 (1), 015501, 2018 | 10 | 2018 |
| Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells Y Minami, H Ota, X Lu, N Kumagai, T Kitada, T Isu Japanese Journal of Applied Physics 56 (4S), 04CH01, 2017 | 10 | 2017 |
| Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311) B GaAs with AlAs cap XM Lu, S Matsubara, Y Nakagawa, T Kitada, T Isu Journal of Crystal Growth 425, 106-109, 2015 | 9 | 2015 |
| Effect of cavity-layer thicknesses on two-color emission in coupled multilayer cavities with InAs quantum dots C Harayama, S Katoh, Y Nakagawa, X Lu, N Kumagai, T Kitada, T Isu Japanese Journal of Applied Physics 54 (4S), 04DG10, 2015 | 9 | 2015 |
| Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources T Kitada, H Ota, X Lu, N Kumagai, T Isu IEICE Transactions on Electronics 100 (2), 171-178, 2017 | 8 | 2017 |
| Sublattice reversal in GaAs/Ge/GaAs (113) B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity X Lu, N Kumagai, Y Minami, T Kitada Japanese Journal of Applied Physics 57 (4S), 04FH07, 2018 | 7 | 2018 |
| Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity TK Xiangmeng Lu, Naoto Kumagai, Yasuo Minami Japanese Journal of Applied Physics 57, 04FH07, 2018 | 7 | 2018 |
| Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources X Lu, H Ota, N Kumagai, Y Minami, T Kitada, T Isu Journal of Crystal Growth 477, 249-252, 2017 | 7 | 2017 |
| Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding Takahiro Kitada, Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita Japanese Journal of Applied Physics 57, 04FH03, 2018 | 5 | 2018 |
| Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy X Lu, M Koyama, Y Izumi, Y Nakata, S Adachi, S Muto Japanese Journal of Applied Physics 52 (2R), 025602, 2013 | 5 | 2013 |
| Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultrafast carrier relaxation N Kumagai, X Lu, Y Minami, T Kitada, T Isu Physica E: Low-dimensional Systems and Nanostructures 126, 114478, 0 | 3 | |
| Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3) A and (1 1 3) B GaAs substrates X Lu, Y Minami, T Kitada Journal of Crystal Growth 512, 74-77, 2019 | 1 | 2019 |
| Effects of Sb-soak on InAs quantum dots grown on (001) and (113) B GaAs substrates X Lu, N Kumagai, Y Minami, T Kitada, T Isu Journal of Crystal Growth 477, 221-224, 2017 | 1 | 2017 |
| 高指数面上の副格子交換エピタキシーと面型非線形光デバイス 北田貴弘， 盧翔孟， 南康夫， 熊谷直人， 森田健 材料 68 (10), 739-744, 2019 | | 2019 |
| Time-resolved measurements of two-color laser light emitted from GaAs/AlGaAs-coupled multilayer cavity Y Minami, K Ogusu, X Lu, N Kumagai, K Morita, T Kitada Japanese Journal of Applied Physics 58 (SJ), SJJC03, 2019 | | 2019 |
| 半導体結合共振器による面発光テラヘルツ素子 (面型発光デバイスの技術進展と産業応用) 北田貴弘， 南康夫， 盧翔孟， 熊谷直人， 森田健 光学= Japanese journal of optics: publication of the Optical Society of …, 2019 | | 2019 |
| Lateral Photocurrent Spectroscopy of Stacked InAs QDs Layers in Embedded Strain-Relaxed InGaAs Matrix N Kumagai, X Lu, Y Minami, T Kitada 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |