Low-temperature growth of GaAs and AlAs-GaAs quantum-well layers by modified molecular beam epitaxy Y Horikoshi, M Kawashima, H Yamaguchi
Japanese Journal of Applied Physics 25 (10A), L868, 1986
490 1986 Microscopic thickness determination of thin graphite films formed on H Hibino, H Kageshima, F Maeda, M Nagase, Y Kobayashi, H Yamaguchi
Physical Review B—Condensed Matter and Materials Physics 77 (7), 075413, 2008
484 2008 Migration-enhanced epitaxy of GaAs and AlGaAs Y Horikoshi, M Kawashima, H Yamaguchi
Japanese journal of applied physics 27 (2R), 169, 1988
474 1988 Coherent phonon manipulation in coupled mechanical resonators H Okamoto, A Gourgout, CY Chang, K Onomitsu, I Mahboob, EY Chang, ...
Nature Physics 9 (8), 480-484, 2013
397 2013 Bit storage and bit flip operations in an electromechanical oscillator I Mahboob, H Yamaguchi
Nature nanotechnology 3 (5), 275-279, 2008
375 2008 Motion detection of a micromechanical resonator embedded in a dc SQUID S Etaki, M Poot, I Mahboob, K Onomitsu, H Yamaguchi, HSJ Van der Zant
Nature Physics 4 (10), 785-788, 2008
236 2008 Interconnect-free parallel logic circuits in a single mechanical resonator I Mahboob, E Flurin, K Nishiguchi, A Fujiwara, H Yamaguchi
Nature communications 2 (1), 198, 2011
199 2011 Growth process of III–V compound semiconductors by migration-enhanced epitaxy Y Horikoshi, H Yamaguchi, F Briones, M Kawashima
Journal of crystal growth 105 (1-4), 326-338, 1990
187 1990 Phonon waveguides for electromechanical circuits D Hatanaka, I Mahboob, K Onomitsu, H Yamaguchi
Nature nanotechnology 9 (7), 520-524, 2014
182 2014 Phonon-cavity electromechanics I Mahboob, K Nishiguchi, H Okamoto, H Yamaguchi
Nature Physics 8 (5), 387-392, 2012
180 2012 Phonon lasing in an electromechanical resonator I Mahboob, K Nishiguchi, A Fujiwara, H Yamaguchi
Physical review letters 110 (12), 127202, 2013
176 2013 A strict experimental test of macroscopic realism in a superconducting flux qubit GC Knee, K Kakuyanagi, MC Yeh, Y Matsuzaki, H Toida, H Yamaguchi, ...
Nature communications 7 (1), 13253, 2016
171 2016 Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs (111) A H Yamaguchi, JG Belk, XM Zhang, JL Sudijono, MR Fahy, TS Jones, ...
Physical Review B 55 (3), 1337, 1997
161 1997 Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 2007
148 2007 Inhibitions of three dimensional island formation in InAs films grown on GaAs (111) A surface by molecular beam epitaxy H Yamaguchi, MR Fahy, BA Joyce
Applied physics letters 69 (6), 776-778, 1996
139 1996 Imaging of Friedel Oscillation Patterns of Two-Dimensionally Accumulated Electrons at Epitaxially Grown InAs(111) K Kanisawa, MJ Butcher, H Yamaguchi, Y Hirayama
Physical Review Letters 86 (15), 3384, 2001
131 2001 Surface structure transitions on InAs and GaAs (001) surfaces H Yamaguchi, Y Horikoshi
Physical Review B 51 (15), 9836, 1995
130 1995 Stacking domains of epitaxial few-layer graphene on SiC (0001) H Hibino, S Mizuno, H Kageshima, M Nagase, H Yamaguchi
Physical Review B—Condensed Matter and Materials Physics 80 (8), 085406, 2009
119 2009 An electromechanical ising hamiltonian I Mahboob, H Okamoto, H Yamaguchi
Science advances 2 (6), e1600236, 2016
117 2016 A scanning tunneling microscopy-Reflection high energy electron diffraction-Rate equation study of the molecular beam epitaxial growth of InAs on GaAs (001),(110) and (111) A … BA Joyce, JL Sudijono, JG Belk, H Yamaguchi, XM Zhang, HT Dobbs, ...
Japanese journal of applied physics 36 (6S), 4111, 1997
114 1997 
Imran MahboobNTT Basic Research LabsZweryfikowany adres z lab.ntt.co.jp
