Basic principles of STT-MRAM cell operation in memory arrays AV Khvalkovskiy, D Apalkov, S Watts, R Chepulskii, RS Beach, A Ong, ...
Journal of Physics D: Applied Physics 46 (7), 074001, 2013
808 2013 Spin-transfer torque magnetic random access memory (STT-MRAM) D Apalkov, A Khvalkovskiy, S Watts, V Nikitin, X Tang, D Lottis, K Moon, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (2), 1-35, 2013
583 2013 Advances and future prospects of spin-transfer torque random access memory E Chen, D Apalkov, Z Diao, A Driskill-Smith, D Druist, D Lottis, V Nikitin, ...
IEEE Transactions on Magnetics 46 (6), 1873-1878, 2010
528 2010 Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion AV Khvalkovskiy, V Cros, D Apalkov, V Nikitin, M Krounbi, KA Zvezdin, ...
Physical Review B—Condensed Matter and Materials Physics 87 (2), 020402, 2013
479 2013 Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots F Flack, N Samarth, V Nikitin, PA Crowell, J Shi, J Levy, DD Awschalom
Physical review B 54 (24), R17312, 1996
209 1996 Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions R Chepulskyy, X Tang, D Apalkov, AV Khvalkovskiy, V Nikitin, MT Krounbi
US Patent 9,130,155, 2015
139 2015 Spatiotemporal near-field spin microscopy in patterned magnetic heterostructures J Levy, V Nikitin, JM Kikkawa, A Cohen, N Samarth, R Garcia, ...
Physical review letters 76 (11), 1948, 1996
129 1996 Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application S Chung, KM Rho, SD Kim, HJ Suh, DJ Kim, HJ Kim, SH Lee, JH Park, ...
2010 International Electron Devices Meeting, 12.7. 1-12.7. 4, 2010
117 2010 Latest advances and roadmap for in-plane and perpendicular STT-RAM A Driskill-Smith, D Apalkov, V Nikitin, X Tang, S Watts, D Lottis, K Moon, ...
2011 3rd IEEE International Memory Workshop (IMW), 1-3, 2011
111 2011 Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge DG Allen, A Baer, M Feldbaum, HC Guthrie, WD Hsiao, Y Hsu, M Jiang, ...
US Patent 7,576,951, 2009
83 2009 Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices AV Khvalkovskiy, D Apalkov, V Nikitin, MT Krounbi
US Patent 9,076,954, 2015
69 2015 Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation D Apalkov, S Watts, A Driskill-Smith, E Chen, Z Diao, V Nikitin
IEEE transactions on magnetics 46 (6), 2240-2243, 2010
67 2010 Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions T Devolder, A Le Goff, V Nikitin
Physical Review B 93 (22), 224432, 2016
54 2016 Zero-dimensional excitonic confinement in locally strained V Nikitin, PA Crowell, JA Gupta, DD Awschalom, F Flack, N Samarth
Applied physics letters 71 (9), 1213-1215, 1997
49 1997 Femtosecond near‐field spin microscopy in digital magnetic heterostructures J Levy, V Nikitin, JM Kikkawa, DD Awschalom, N Samarth
Journal of applied physics 79 (8), 6095-6100, 1996
48 1996 Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy JH Park, Y Kim, WC Lim, JH Kim, SH Park, W Kim, KW Kim, JH Jeong, ...
2012 Symposium on VLSI Technology (VLSIT), 57-58, 2012
45 2012 Progress and prospects of spin transfer torque random access memory E Chen, D Apalkov, A Driskill-Smith, A Khvalkovskiy, D Lottis, K Moon, ...
IEEE transactions on magnetics 48 (11), 3025-3030, 2012
44 2012 Spatial and temporal profiling of protrusion in magnetic recording heads V Nikitin, S Gider, J Tabib, D Hsiao, M Salo, G Sui, S Yuan, NA Satoh, ...
IEEE transactions on magnetics 40 (1), 326-331, 2004
44 2004 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories D Apalkov, V Nikitin, D Druist, SM Watts
US Patent 8,159,866, 2012
42 2012 Material developments and domain wall-based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells T Devolder, JV Kim, J Swerts, S Couet, S Rao, W Kim, S Mertens, G Kar, ...
IEEE Transactions on Magnetics 54 (2), 1-9, 2017
38 2017 
Dmytro ApalkovSr. Principal Engineer/Sr. Director, Modeling, Samsung Semiconductor R&DZweryfikowany adres z samsung.com