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Sou-Chi Chang
Sou-Chi Chang
Components Research at Intel
Zweryfikowany adres z intel.com
Tytuł
Cytowane przez
Cytowane przez
Rok
Physical origin of transient negative capacitance in a ferroelectric capacitor
SC Chang, UE Avci, DE Nikonov, S Manipatruni, IA Young
Physical Review Applied 9 (1), 014010, 2018
982018
Non-volatile clocked spin wave interconnect for beyond-CMOS nanomagnet pipelines
S Dutta, SC Chang, N Kani, DE Nikonov, S Manipatruni, IA Young, ...
Scientific reports 5 (1), 9861, 2015
952015
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
772023
Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction
M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye
ACS nano 15 (3), 5689-5695, 2021
722021
3d-ferroelectric random access memory (3d-fram)
S Shivaraman, SC Chang, AV Penumatcha, N Haratipour, UE Avci
US Patent App. 16/599,422, 2021
712021
Impact of oxygen vacancy content in ferroelectric HZO films on the device performance
T Mittmann, M Materano, SC Chang, I Karpov, T Mikolajick, U Schroeder
2020 IEEE International Electron Devices Meeting (IEDM), 18.4. 1-18.4. 4, 2020
672020
Circuit simulation of magnetization dynamics and spin transport
P Bonhomme, S Manipatruni, RM Iraei, S Rakheja, SC Chang, ...
IEEE Transactions on Electron Devices 61 (5), 1553-1560, 2014
582014
Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM
SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020
542020
Impact of dimensional scaling and size effects on spin transport in copper and aluminum interconnects
S Rakheja, SC Chang, A Naeemi
IEEE transactions on electron devices 60 (11), 3913-3919, 2013
442013
Theoretical approach to electroresistance in ferroelectric tunnel junctions
SC Chang, A Naeemi, DE Nikonov, A Gruverman
Physical Review Applied 7 (2), 024005, 2017
412017
Design and analysis of Si interconnects for all-spin logic
SC Chang, S Manipatruni, DE Nikonov, IA Young, A Naeemi
IEEE Transactions on Magnetics 50 (9), 1-13, 2014
402014
Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering
N Haratipour, SC Chang, CC Lin, J Kavalieros, U Avci, I Young
US Patent 11,063,131, 2021
392021
Design and analysis of copper and aluminum interconnects for all-spin logic
SC Chang, RM Iraei, S Manipatruni, DE Nikonov, IA Young, A Naeemi
IEEE Transactions on Electron Devices 61 (8), 2905-2911, 2014
392014
FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory
SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ...
2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021
382021
A thermodynamic perspective of negative-capacitance field-effect transistors
SC Chang, UE Avci, DE Nikonov, IA Young
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017
362017
Hafnia-based FeRAM: a path toward ultra-high density for next-generation high-speed embedded memory
N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ...
2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022
212022
Understanding the switching mechanisms of the antiferromagnet/ferromagnet heterojunction
YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi
Nano Letters 20 (11), 7919-7926, 2020
172020
Scaling limits on all-spin logic
SC Chang, N Kani, S Manipatruni, DE Nikonov, IA Young, A Naeemi
IEEE Transactions on Magnetics 52 (7), 1-4, 2016
172016
A theoretical study of multidomain ferroelectric switching dynamics with a physics-based SPICE circuit model for phase-field simulations
CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi
IEEE Transactions on Electron Devices 67 (7), 2952-2959, 2020
162020
A model study of an error-free magnetization reversal through dipolar coupling in a two-magnet system
N Kani, SC Chang, S Dutta, A Naeemi
IEEE Transactions on Magnetics 52 (2), 1-12, 2015
162015
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