Artykuły udostępnione publicznie: - Huaqiang WuWięcej informacji
Niedostępne w żadnym miejscu: 128
Resistive switching materials for information processing
Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang
Nature Reviews Materials 5 (3), 173-195, 2020
Upoważnienia: US Department of Defense
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning
X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou
Advanced Functional Materials 28 (40), 1803728, 2018
Upoważnienia: National Natural Science Foundation of China
Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer
W Wu, H Wu, B Gao, N Deng, S Yu, H Qian
IEEE Electron Device Letters 38 (8), 1019-1022, 2017
Upoważnienia: National Natural Science Foundation of China
A methodology to improve linearity of analog RRAM for neuromorphic computing
W Wu, H Wu, B Gao, P Yao, X Zhang, X Peng, S Yu, H Qian
2018 IEEE symposium on VLSI technology, 103-104, 2018
Upoważnienia: National Natural Science Foundation of China
In-memory learning with analog resistive switching memory: A review and perspective
Y Xi, B Gao, J Tang, A Chen, MF Chang, XS Hu, J Van Der Spiegel, ...
Proceedings of the IEEE 109 (1), 14-42, 2020
Upoważnienia: National Natural Science Foundation of China
A memristor-based analogue reservoir computing system for real-time and power-efficient signal processing
Y Zhong, J Tang, X Li, X Liang, Z Liu, Y Li, Y Xi, P Yao, Z Hao, B Gao, ...
Nature Electronics 5 (10), 672-681, 2022
Upoważnienia: National Natural Science Foundation of China
Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device
Y Sun, M Tai, C Song, Z Wang, J Yin, F Li, H Wu, F Zeng, H Lin, F Pan
The Journal of Physical Chemistry C 122 (11), 6431-6436, 2018
Upoważnienia: National Natural Science Foundation of China
Synaptic silicon-nanocrystal phototransistors for neuromorphic computing
L Yin, C Han, Q Zhang, Z Ni, S Zhao, K Wang, D Li, M Xu, H Wu, X Pi, ...
Nano Energy 63, 103859, 2019
Upoważnienia: National Natural Science Foundation of China
33.1 A 74 TMACS/W CMOS-RRAM neurosynaptic core with dynamically reconfigurable dataflow and in-situ transposable weights for probabilistic graphical models
W Wan, R Kubendran, SB Eryilmaz, W Zhang, Y Liao, D Wu, S Deiss, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 498-500, 2020
Upoważnienia: US National Science Foundation, US Department of Defense
Analog‐type resistive switching devices for neuromorphic computing
W Zhang, B Gao, J Tang, X Li, W Wu, H Qian, H Wu
physica status solidi (RRL)–Rapid Research Letters 13 (10), 1900204, 2019
Upoważnienia: National Natural Science Foundation of China
Investigation of statistical retention of filamentary analog RRAM for neuromophic computing
M Zhao, H Wu, B Gao, Q Zhang, W Wu, S Wang, Y Xi, D Wu, N Deng, ...
2017 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2017
Upoważnienia: National Natural Science Foundation of China
Metallic to hopping conduction transition in Ta2O5− x/TaOy resistive switching device
Y Zhang, N Deng, H Wu, Z Yu, J Zhang, H Qian
Applied Physics Letters 105 (6), 2014
Upoważnienia: National Natural Science Foundation of China
Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing
C He, J Tang, DS Shang, J Tang, Y Xi, S Wang, N Li, Q Zhang, JK Lu, ...
ACS applied materials & interfaces 12 (10), 11945-11954, 2020
Upoważnienia: Chinese Academy of Sciences, National Natural Science Foundation of China
Truly electroforming‐free and low‐energy memristors with preconditioned conductive tunneling paths
JH Yoon, J Zhang, X Ren, Z Wang, H Wu, Z Li, M Barnell, Q Wu, ...
Advanced Functional Materials 27 (35), 1702010, 2017
Upoważnienia: US National Science Foundation, US Department of Defense
Probing the photovoltage and photocurrent in perovskite solar cells with nanoscale resolution
Z Zhao, X Chen, H Wu, X Wu, G Cao
Advanced functional materials 26 (18), 3048-3058, 2016
Upoważnienia: National Natural Science Foundation of China
25.2 A Reconfigurable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source With <6×10−6 Native Bit Error Rate
Y Pang, B Gao, D Wu, S Yi, Q Liu, WH Chen, TW Chang, WE Lin, X Sun, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 402-404, 2019
Upoważnienia: US National Science Foundation, National Natural Science Foundation of China
Design guidelines of RRAM based neural-processing-unit: A joint device-circuit-algorithm analysis
W Zhang, X Peng, H Wu, B Gao, H He, Y Zhang, S Yu, H Qian
Proceedings of the 56th Annual Design Automation Conference 2019, 1-6, 2019
Upoważnienia: National Natural Science Foundation of China
Characterizing endurance degradation of incremental switching in analog RRAM for neuromorphic systems
M Zhao, H Wu, B Gao, X Sun, Y Liu, P Yao, Y Xi, X Li, Q Zhang, K Wang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2018
Upoważnienia: National Natural Science Foundation of China
Electrode-induced digital-to-analog resistive switching in TaOx-based RRAM devices
X Li, H Wu, B Gao, W Wu, D Wu, N Deng, J Cai, H Qian
Nanotechnology 27 (30), 305201, 2016
Upoważnienia: National Natural Science Foundation of China
Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing
B Gao, H Wu, W Wu, X Wang, P Yao, Y Xi, W Zhang, N Deng, P Huang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2017
Upoważnienia: National Natural Science Foundation of China
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