A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano Letters 11 (6), 2272-2279, 2011
82 2011 The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 2019
74 2019 New avenues to an old material: controlled nanoscale doping of germanium G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanoscale 5 (7), 2600-2615, 2013
54 2013 Preparation of the Ge (001) surface towards fabrication of atomic-scale germaniumdevices WM Klesse, G Scappucci, G Capellini, MY Simmons
Nanotechnology 22 (14), 145604, 2011
45 2011 Phosphorus atomic layer doping of germanium by the stacking of multipleδ layers G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanotechnology 22 (37), 375203, 2011
39 2011 Decoupling of graphene from Ni (111) via formation of an interfacial NiO layer Y Dedkov, W Klesse, A Becker, F Spaeth, C Papp, E Voloshina
Carbon 121, 10-16, 2017
38 2017 Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device C Corley-Wiciak, C Richter, MH Zoellner, I Zaitsev, CL Manganelli, ...
ACS Applied Materials & Interfaces 15 (2), 3119-3130, 2023
37 2023 Compositional dependence of the band-gap of Ge1− x− ySixSny alloys T Wendav, IA Fischer, M Montanari, MH Zoellner, W Klesse, G Capellini, ...
Applied Physics Letters 108 (24), 2016
35 2016 Bottom-up assembly of metallic germanium G Scappucci, WM Klesse, LRA Yeoh, DJ Carter, O Warschkow, NA Marks, ...
Scientific reports 5 (1), 12948, 2015
29 2015 Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci
ACS nano 7 (12), 11310-11316, 2013
28 2013 Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Physical Review Letters 112 (23), 236602, 2014
25 2014 Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si (001): A comprehensive analysis CL Manganelli, M Virgilio, O Skibitzki, M Salvalaglio, D Spirito, P Zaumseil, ...
Journal of Raman Spectroscopy 51 (6), 989-996, 2020
24 2020 Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers E Calandrini, T Venanzi, F Appugliese, M Badioli, V Giliberti, ...
Applied Physics Letters 109 (12), 2016
23 2016 Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport G Scappucci, WM Klesse, AR Hamilton, G Capellini, DL Jaeger, ...
Nano Letters 12 (9), 4953-4959, 2012
23 2012 G Scappucci, O Warschkow, G Capellini, WM Klesse, DR McKenzie, ...
Physical Review Letters 109 (7), 076101, 2012
22 2012 Atomic layer doping of strained Ge-on-insulator thin films with high electron densities WM Klesse, G Scappucci, G Capellini, JM Hartmann, MY Simmons
Applied Physics Letters 102 (15), 2013
21 2013 Dual-temperature encapsulation of phosphorus in germanium δ‐layers toward ultra-shallow junctions G Scappucci, G Capellini, WM Klesse, MY Simmons
Journal of Crystal Growth 316 (1), 81-84, 2011
17 2011 Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ -layers S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Scientific Reports 7 (1), 46670, 2017
16 2017 Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer N Taoka, G Capellini, N von den Driesch, D Buca, P Zaumseil, ...
Applied physics express 9 (3), 031201, 2016
14 2016 Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si (001) V Schlykow, WM Klesse, G Niu, N Taoka, Y Yamamoto, O Skibitzki, ...
Applied Physics Letters 109 (20), 2016
13 2016