| Two-dimensional materials prospects for non-volatile spintronic memories H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny, B Dlubak, A Fert, ... Nature 606 (7915), 663-673, 2022 | 293 | 2022 |
| 4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure SW Chung, T Kishi, JW Park, M Yoshikawa, KS Park, T Nagase, ... 2016 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2016 | 166 | 2016 |
| Manufacturable 22nm FD-SOI embedded MRAM technology for industrial-grade MCU and IOT applications VB Naik, K Lee, K Yamane, R Chao, J Kwon, N Thiyagarajah, NL Chung, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2019 | 73 | 2019 |
| High post-annealing stability in [Pt/Co] multilayers T Young Lee, D Su Son, S Ho Lim, SR Lee Journal of Applied Physics 113 (21), 2013 | 51 | 2013 |
| JEDEC-qualified highly reliable 22nm FD-SOI embedded MRAM for low-power industrial-grade, and extended performance towards automotive-grade-1 applications VB Naik, K Yamane, TY Lee, J Kwon, R Chao, JH Lim, NL Chung, ... 2020 IEEE International Electron Devices Meeting (IEDM), 11.3. 1-11.3. 4, 2020 | 45 | 2020 |
| World-most energy-efficient MRAM technology for non-volatile RAM applications TY Lee, JM Lee, MK Kim, JS Oh, JW Lee, HM Jeong, PH Jang, MK Joo, ... 2022 International Electron Devices Meeting (IEDM), 10.7. 1-10.7. 4, 2022 | 37 | 2022 |
| Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers TY Lee, Y Chan Won, D Su Son, S Ho Lim, SR Lee Journal of Applied Physics 114 (17), 2013 | 37 | 2013 |
| Multilayered magnetic thin film stack and nonvolatile memory device having the same SH Lim, TY Lee, YC Won, SR Lee US Patent 9,755,140, 2017 | 21 | 2017 |
| Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same SH Lim, TY Lee, SR Lee, DS Son US Patent 9,705,075, 2017 | 21 | 2017 |
| Strength of perpendicular magnetic anisotropy at bottom and top interfaces in [Pt/Co/Pt] trilayers TY Lee, YC Won, DS Son, SH Lim, SR Lee IEEE Magnetics Letters 5, 1-4, 2014 | 21 | 2014 |
| Advanced MTJ stack engineering of STT-MRAM to realize high speed applications TY Lee, K Yamane, Y Otani, D Zeng, J Kwon, JH Lim, VB Naik, LY Hau, ... 2020 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2020 | 20 | 2020 |
| Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure TY Lee, J Chang, MC Hickey, HC Koo, H Kim, SH Han, JS Moodera Applied Physics Letters 98 (20), 2011 | 14 | 2011 |
| Magnetic memory device T Oikawa, T Nagase, EEH Youngmin, D Watanabe, K Sawada, K Yoshino, ... US Patent App. 15/702,677, 2018 | 12 | 2018 |
| Microwave properties and damping in [Pt/Co] multilayers with perpendicular anisotropy A Caprile, M Pasquale, M Kuepferling, M Coïsson, TY Lee, SH Lim IEEE Magnetics Letters 5, 1-4, 2014 | 12 | 2014 |
| Electronic device T Lee US Patent 9,898,426, 2018 | 11 | 2018 |
| Relation between switching time distribution and damping constant in magnetic nanostructure JH Moon, TY Lee, CY You Scientific Reports 8 (1), 13288, 2018 | 9 | 2018 |
| Multi-bit MTJ memory cell using two variable resistance layers T Lee US Patent 9,450,021, 2016 | 9 | 2016 |
| Origins and signatures of tail bit failures in ultrathin mgo based stt-mram JH Lim, N Raghavan, JH Kwon, TY Lee, R Chao, NL Chung, K Yamane, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 8 | 2020 |
| Magnetic immunity guideline for embedded MRAM reliability to realize mass production TY Lee, K Yamane, LY Hau, R Chao, NL Chung, VB Naik, K Sivabalan, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 8 | 2020 |
| Magnetic device YM Eeh, T Lee, K Sawada, E Kitagawa, T Isoda, T Oikawa, K Yoshino US Patent 11,127,445, 2021 | 7 | 2021 |
Hyunsoo YangElectrical and Computer Engineering, National University of SingaporeZweryfikowany adres z nus.edu.sg