| Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki Journal of crystal growth 98 (1-2), 209-219, 1989 | 1165 | 1989 |
| Single-crystalline ZnS nanobelts as ultraviolet-light sensors X Fang, Y Bando, M Liao, UK Gautam, C Zhi, B Dierre, B Liu, T Zhai, ... Advanced Materials 21 (20), 2034-2039, 2009 | 649 | 2009 |
| Centimeter-long V {sub 2} O {sub 5} nanowires: from synthesis to field-emission, electrochemical, electrical transport, and photoconductive properties T Zhai, X Fang, L Li, Y Bando, D Golberg, H Liu, H Li, H Zhou, M Liao, ... Advanced Materials (Weinheim) 22, 2010 | 433 | 2010 |
| Efficient Assembly of Bridged β‐Ga2O3 Nanowires for Solar‐Blind Photodetection Y Li, T Tokizono, M Liao, M Zhong, Y Koide, I Yamada, JJ Delaunay Advanced Functional Materials 20 (22), 3972-3978, 2010 | 386 | 2010 |
| Single‐crystalline CdS nanobelts for excellent field‐emitters and ultrahigh quantum‐efficiency photodetectors L Li, P Wu, X Fang, T Zhai, L Dai, M Liao, Y Koide, H Wang, Y Bando, ... Advanced Materials 22 (29), 3161-3165, 2010 | 386 | 2010 |
| Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces H Ishikawa, S Kobayashi, Y Koide, S Yamasaki, S Nagai, J Umezaki, ... Journal of applied physics 81 (3), 1315-1322, 1997 | 333 | 1997 |
| Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors T Zhai, X Fang, M Liao, X Xu, L Li, B Liu, Y Koide, Y Ma, J Yao, Y Bando, ... ACS nano 4 (3), 1596-1602, 2010 | 310 | 2010 |
| Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes D Inoue, A Miura, T Nomura, H Fujikawa, K Sato, N Ikeda, D Tsuya, ... Applied Physics Letters 98 (9), 2011 | 303 | 2011 |
| Energy band‐gap bowing parameter in an AlxGa1−x N alloy Y Koide, H Itoh, MRH Khan, K Hiramatu, N Sawaki, I Akasaki Journal of applied physics 61 (9), 4540-4543, 1987 | 294 | 1987 |
| Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobelts L Li, PS Lee, C Yan, T Zhai, X Fang, M Liao, Y Koide, Y Bando, D Golberg | 281 | 2010 |
| Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS‐ZnO heterostructure nanofilms W Tian, C Zhang, T Zhai, SL Li, X Wang, J Liu, X Jie, D Liu, M Liao, ... Advanced Materials 26 (19), 3088-3093, 2014 | 278 | 2014 |
| An efficient way to assemble ZnS nanobelts as ultraviolet‐light sensors with enhanced photocurrent and stability X Fang, Y Bando, M Liao, T Zhai, UK Gautam, L Li, Y Koide, D Golberg Advanced Functional Materials 20 (3), 500-508, 2010 | 268 | 2010 |
| Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts L Li, E Auer, M Liao, X Fang, T Zhai, UK Gautam, A Lugstein, Y Koide, ... Nanoscale 3 (3), 1120-1126, 2011 | 254 | 2011 |
| High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors. X Fang, S Xiong, T Zhai, Y Bando, M Liao, UK Gautam, Y Koide, X Zhang, ... Advanced Materials (Deerfield Beach, Fla.) 21 (48), 5016-5021, 2009 | 247 | 2009 |
| Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN Y Koide, T Maeda, T Kawakami, S Fujita, T Uemura, N Shibata, ... Journal of electronic materials 28, 341-346, 1999 | 198 | 1999 |
| Electrical transport and high-performance photoconductivity in individual ZrS2 nanobelts L Li, X Fang, T Zhai, M Liao, UK Gautam, X Wu, Y Koide, Y Bando, ... Adv. Mater 22 (37), 4151-4156, 2010 | 192 | 2010 |
| Extreme dielectric strength in boron doped homoepitaxial diamond PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ... Applied Physics Letters 97 (22), 2010 | 171 | 2010 |
| Single‐Crystalline Sb2Se3 Nanowires for High‐Performance Field Emitters and Photodetectors T Zhai, M Ye, L Li, X Fang, M Liao, Y Li, Y Koide, Y Bando, D Golberg Advanced Materials 22 (40), 4530-4533, 2010 | 167 | 2010 |
| Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric J Liu, M Liao, M Imura, A Tanaka, H Iwai, Y Koide Scientific Reports 4 (1), 6395, 2014 | 165 | 2014 |
| Effect of AlN buffer layer on AlGaN/α-Al2O3 heteroepitaxial growth by metalorganic vapor phase epitaxy Y Koide, N Itoh, K Itoh, N Sawaki, I Akasaki Japanese journal of applied physics 27 (7R), 1156, 1988 | 157 | 1988 |
Meiyong LiaoNational Institute for Materials ScienceZweryfikowany adres z nims.go.jp