| Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ... Advanced Materials Interfaces 6 (11), 1900042, 2019 | 196 | 2019 |
| Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ... Journal of Materials Chemistry C 8 (31), 10526-10550, 2020 | 132 | 2020 |
| Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019 | 129 | 2019 |
| SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0. 5Zr0. 5O2 J Okuno, T Kunihiro, K Konishi, H Maemura, Y Shuto, F Sugaya, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 116 | 2020 |
| Many routes to ferroelectric HfO2: A review of current deposition methods HA Hsain, Y Lee, M Materano, T Mittmann, A Payne, T Mikolajick, ... Journal of Vacuum Science & Technology A 40 (1), 2022 | 109 | 2022 |
| Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers M Materano, T Mittmann, PD Lomenzo, C Zhou, JL Jones, M Falkowski, ... ACS applied electronic materials 2 (11), 3618-3626, 2020 | 105 | 2020 |
| Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics M Materano, PD Lomenzo, A Kersch, MH Park, T Mikolajick, U Schroeder Inorganic Chemistry Frontiers 8 (10), 2650-2672, 2021 | 103 | 2021 |
| Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors F Mehmood, M Hoffmann, PD Lomenzo, C Richter, M Materano, ... Advanced Materials Interfaces 6 (21), 1901180, 2019 | 94 | 2019 |
| Domains and domain dynamics in fluorite-structured ferroelectrics DH Lee, Y Lee, K Yang, JY Park, SH Kim, PRS Reddy, M Materano, ... Applied Physics Reviews 8 (2), 2021 | 86 | 2021 |
| Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium U Schroeder, M Materano, T Mittmann, PD Lomenzo, T Mikolajick, ... Japanese Journal of Applied Physics 58 (SL), SL0801, 2019 | 80 | 2019 |
| Polarization switching in thin doped HfO2 ferroelectric layers M Materano, PD Lomenzo, H Mulaosmanovic, M Hoffmann, A Toriumi, ... Applied Physics Letters 117 (26), 2020 | 79 | 2020 |
| Built-in bias generation in anti-ferroelectric stacks: Methods and device applications M Pešić, T Li, V Di Lecce, M Hoffmann, M Materano, C Richter, B Max, ... IEEE Journal of the Electron Devices Society 6, 1019-1025, 2018 | 74 | 2018 |
| Impact of vacancies and impurities on ferroelectricity in PVD-and ALD-grown HfO2 films L Baumgarten, T Szyjka, T Mittmann, M Materano, Y Matveyev, ... Applied Physics Letters 118 (3), 2021 | 71 | 2021 |
| Impact of oxygen vacancy content in ferroelectric HZO films on the device performance T Mittmann, M Materano, SC Chang, I Karpov, T Mikolajick, U Schroeder 2020 IEEE International Electron Devices Meeting (IEDM), 18.4. 1-18.4. 4, 2020 | 66 | 2020 |
| 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline J Okuno, T Kunihiro, K Konishi, M Materano, T Ali, K Kuehnel, K Seidel, ... IEEE Journal of the Electron Devices Society 10, 29-34, 2021 | 53 | 2021 |
| Material perspectives of HfO2-based ferroelectric films for device applications A Toriumi, L Xu, Y Mori, X Tian, PD Lomenzo, H Mulaosmanovic, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2019 | 53 | 2019 |
| Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material U Schroeder, T Mittmann, M Materano, PD Lomenzo, P Edgington, ... Advanced Electronic Materials 8 (9), 2200265, 2022 | 45 | 2022 |
| High-endurance and low-voltage operation of 1T1C FeRAM arrays for nonvolatile memory application J Okuno, T Kunihiro, K Konishi, H Maemura, Y Shuto, F Sugaya, ... 2021 IEEE International Memory Workshop (IMW), 1-3, 2021 | 44 | 2021 |
| The Electrode‐Ferroelectric interface as the primary constraint on endurance and retention in HZO‐Based ferroelectric capacitors R Alcala, M Materano, PD Lomenzo, P Vishnumurthy, W Hamouda, ... Advanced functional materials 33 (43), 2303261, 2023 | 42 | 2023 |
| HfxZr1− xO2 thin films for semiconductor applications: An Hf-and Zr-ALD precursor comparison M Materano, C Richter, T Mikolajick, U Schroeder Journal of Vacuum Science & Technology A 38 (2), 2020 | 41 | 2020 |