| Contact hole reticle optimization by using interference mapping lithography (IML) RJ Socha, DJ Van Den Broeke, SD Hsu, JF Chen, TL Laidig, N Corcoran, ... Optical Microlithography XVII 5377, 222-240, 2004 | 117 | 2004 |
| High NA EUV lithography: Next step in EUV imaging E van Setten, G Bottiglieri, J McNamara, J van Schoot, K Troost, J Zekry, ... Extreme Ultraviolet (EUV) Lithography X 10957, 9-18, 2019 | 83 | 2019 |
| An innovative source-mask co-optimization (SMO) method for extending low k1 imaging S Hsu, L Chen, Z Li, S Park, K Gronlund, H Liu, N Callan, R Socha, ... Lithography Asia 2008 7140, 220-229, 2008 | 83 | 2008 |
| EUV resolution enhancement techniques (RETs) for k1 0.4 and below S Hsu, R Howell, J Jia, HY Liu, K Gronlund, S Hansen, J Zimmermann Extreme Ultraviolet (EUV) Lithography VI 9422, 480-495, 2015 | 77 | 2015 |
| Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography D Van Den Broeke, JF Chen, T Laidig, KE Wampler, SD Hsu US Patent 7,247,574, 2007 | 72 | 2007 |
| Application challenges with double patterning technology (DPT) beyond 45 nm J Park, S Hsu, D Van Den Broeke, JF Chen, M Dusa, R Socha, J Finders, ... Photomask Technology 2006 6349, 611-622, 2006 | 64 | 2006 |
| EUV source-mask optimization for 7nm node and beyond X Liu, R Howell, S Hsu, K Yang, K Gronlund, F Driessen, HY Liu, ... Extreme Ultraviolet (EUV) Lithography V 9048, 171-181, 2014 | 58 | 2014 |
| Understanding the forbidden pitch phenomenon and assist feature placement X Shi, S Hsu, JF Chen, CM Hsu, RJ Socha, MV Dusa Metrology, Inspection, and Process Control for Microlithography XVI 4689 …, 2002 | 52 | 2002 |
| Performance of a programmable illuminator for generation of freeform sources on high NA immersion systems M Mulder, A Engelen, O Noordman, R Kazinczi, G Streutker, ... Lithography Asia 2009 7520, 308-316, 2009 | 48 | 2009 |
| Dipole decomposition mask design for full-chip implementation at 100-nm technology node and beyond S Hsu, NP Corcoran, M Eurlings, WT Knose, TL Laidig, KE Wampler, ... Optical Microlithography XV 4691, 476-490, 2002 | 48 | 2002 |
| Orientation dependent shielding for use with dipole illumination techniques SD Hsu, N Corcoran, JF Chen US Patent 7,246,342, 2007 | 46 | 2007 |
| Double patterning lithography: The bridge between low k (1) ArF and EUV J Finders, M Dusa, S Hsu Microlithography World 17 (1), 2-+, 2008 | 45 | 2008 |
| Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells J Bekaert, B Laenens, S Verhaegen, L Van Look, D Trivkovic, F Lazzarino, ... Optical Microlithography XXIII 7640, 79-90, 2010 | 42 | 2010 |
| Development of layout split algorithms and printability evaluation for double patterning technology TB Chiou, R Socha, H Chen, L Chen, S Hsu, P Nikolsky, A van Oosten, ... Optical Microlithography XXI 6924, 1216-1225, 2008 | 42 | 2008 |
| Double exposure technique for 45nm node and beyond S Hsu, J Park, D Van Den Broeke, JF Chen 25th Annual BACUS Symposium on Photomask Technology 5992, 557-572, 2005 | 41 | 2005 |
| Complex 2D pattern lithography at lambda/4 resolution using chromeless phase lithography (CPL) DJ Van Den Broeke, JF Chen, TL Laidig, S Hsu, KE Wampler, RJ Socha, ... Optical Microlithography XV 4691, 196-214, 2002 | 38 | 2002 |
| Source-mask co-optimization: optimize design for imaging and impact of source complexity on lithography performance S Hsu, Z Li, L Chen, K Gronlund, H Liu, R Socha Lithography Asia 2009 7520, 101-111, 2009 | 37 | 2009 |
| Method and apparatus for performing rule-based gate shrink utilizing dipole illumination SD Hsu, N Corcoran, JF Chen US Patent 6,915,505, 2005 | 34 | 2005 |
| Source mask optimization methodology (SMO) and application to real full chip optical proximity correction DQ Zhang, GS Chua, YM Foong, Y Zou, S Hsu, S Baron, M Feng, HY Liu, ... Optical Microlithography XXV 8326, 637-647, 2012 | 33 | 2012 |
| Assist features: placement, impact, and relevance for EUV imaging I Mochi, V Philipsen, E Gallagher, E Hendrickx, K Lyakhova, F Wittebrood, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 513-529, 2016 | 32 | 2016 |
Steven G. HansenASML - retiredZweryfikowany adres z asml.com