| Magnetism in MoS2 induced by proton irradiation S Mathew, K Gopinadhan, TK Chan, XJ Yu, D Zhan, L Cao, A Rusydi, ... Applied Physics Letters 101 (10), 2012 | 249 | 2012 |
| The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation S Mathew, TK Chan, D Zhan, K Gopinadhan, AR Barman, MBH Breese, ... Carbon 49 (5), 1720-1726, 2011 | 115 | 2011 |
| Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study S Mathew, TK Chan, D Zhan, K Gopinadhan, A Roy Barman, MBH Breese, ... Journal of Applied Physics 110 (8), 2011 | 76 | 2011 |
| Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning S Mathew, A Annadi, TK Chan, TC Asmara, D Zhan, XR Wang, S Azimi, ... ACS nano 7 (12), 10572-10581, 2013 | 37 | 2013 |
| Formation of epitaxial metastable NiGe2 thin film on Ge (100) by pulsed excimer laser anneal PSY Lim, DZ Chi, PC Lim, XC Wang, TK Chan, T Osipowicz, YC Yeo Applied Physics Letters 97 (18), 2010 | 28 | 2010 |
| The CIBA high resolution RBS facility T Osipowicz, HL Seng, TK Chan, B Ho Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 28 | 2006 |
| Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys VR D'Costa, W Wang, Q Zhou, TK Chan, T Osipowicz, ES Tok, YC Yeo Journal of Applied Physics 116 (5), 2014 | 27 | 2014 |
| Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing GH Wang, EH Toh, X Wang, S Tripathy, T Osipowicz, TK Chan, KM Hoe, ... Applied Physics Letters 91 (20), 2007 | 27 | 2007 |
| Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals SK Karuturi, L Liu, LT Su, A Chutinan, NP Kherani, TK Chan, T Osipowicz, ... Nanoscale 3 (12), 4951-4954, 2011 | 22 | 2011 |
| Ion induced intermixing and consequent effects on the leakage currents in HfO2/SiO2/Si systems N Manikanthababu, TK Chan, S Vajandar, V Saikiran, AP Pathak, ... Applied Physics A 123, 1-7, 2017 | 20 | 2017 |
| Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering UB Singh, DC Agarwal, SA Khan, S Mohapatra, H Amekura, DP Datta, ... Beilstein journal of nanotechnology 5 (1), 105-110, 2014 | 18 | 2014 |
| Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon N Manikanthababu, TK Chan, AP Pathak, G Devaraju, NS Rao, P Yang, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 17 | 2014 |
| Single crystalline germanium-lead alloy on germanium substrate formed by pulsed laser epitaxy Q Zhou, TK Chan, SL Lim, C Zhan, T Osipowicz, X Gong, ES Tok, YC Yeo ECS Solid State Letters 3 (8), P91, 2014 | 16 | 2014 |
| Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn, Cr) Te system MG Sreenivasan, KL Teo, XZ Cheng, MBA Jalil, T Liew, TC Chong, AY Du, ... Journal of Applied Physics 102 (5), 2007 | 16 | 2007 |
| Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study VR D'Costa, L Wang, W Wang, SL Lim, TK Chan, LH Chua, T Henry, ... Applied Physics Letters 105 (12), 2014 | 14 | 2014 |
| Reduced contact resistance and improved surface morphology of ohmic contacts on GaN employing KrF laser irradiation GH Wang, TC Wong, X Wang, HY Zheng, TK Chan, T Osipowicz, YL Foo, ... Japanese Journal of Applied Physics 50 (4S), 04DF06, 2011 | 14 | 2011 |
| Lu2O3∕ Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices P Darmawan, MY Chan, T Zhang, Y Setiawan, HL Seng, TK Chan, ... Applied Physics Letters 93 (6), 2008 | 12 | 2008 |
| ECS Solid State Letters 3 Q Zhou, TK Chan, SL Lim, C Zhan, T Osipowicz, X Gong, ES Tok, YC Yeo P91, 2014 | 10 | 2014 |
| Interface strain study of thin Lu2O3/Si using HRBS TK Chan, P Darmawan, CS Ho, P Malar, PS Lee, T Osipowicz Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008 | 9 | 2008 |
| Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs GH Wang, EH Toh, X Wang, DHL Seng, S Tripathy, T Osipowicz, TK Chan, ... 2007 IEEE International Electron Devices Meeting, 131-134, 2007 | 8 | 2007 |
