Silicon single-electron devices Y Takahashi, Y Ono, A Fujiwara, H Inokawa
Journal of physics: Condensed matter 14 (39), R995, 2002
238 2002 Optimization of active surface area of flower like MoS2 using V-doping towards enhanced hydrogen evolution reaction in acidic and basic medium S Bolar, S Shit, JS Kumar, NC Murmu, RS Ganesh, H Inokawa, T Kuila
Applied Catalysis B: Environmental 254, 432-442, 2019
224 2019 Epitaxial growth of Al on Si (111) and Si (100) by ionized‐cluster beam I Yamada, H Inokawa, T Takagi
Journal of applied physics 56 (10), 2746-2750, 1984
224 1984 Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities T Tanabe, K Nishiguchi, A Shinya, E Kuramochi, H Inokawa, M Notomi, ...
Applied Physics Letters 90 (3), 2007
196 2007 Pauli-spin-blockade transport through a silicon double quantum dot HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ...
Physical Review B—Condensed Matter and Materials Physics 77 (7), 073310, 2008
175 2008 Manipulation and detection of single electrons for future information processing Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi
Journal of Applied Physics 97 (3), 2005
169 2005 Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ...
Applied Physics Letters 88 (5), 2006
168 2006 A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors H Inokawa, A Fujiwara, Y Takahashi
IEEE Transactions on Electron Devices 50 (2), 462-470, 2003
168 2003 Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 2007
148 2007 A compact analytical model for asymmetric single-electron tunneling transistors H Inokawa, Y Takahashi
IEEE Transactions on Electron Devices 50 (2), 455-461, 2003
142 2003 Metal− semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation A Vijayaraghavan, K Kanzaki, S Suzuki, Y Kobayashi, H Inokawa, Y Ono, ...
Nano letters 5 (8), 1575-1579, 2005
106 2005 Development of carbon coated NiS2 as positive electrode material for high performance asymmetric supercapacitor S Ghosh, JS Kumar, NC Murmu, RS Ganesh, H Inokawa, T Kuila
Composites Part B: Engineering 177, 107373, 2019
96 2019 Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires D Moraru, Y Ono, H Inokawa, M Tabe
Physical Review B—Condensed Matter and Materials Physics 76 (7), 075332, 2007
87 2007 Modeling, Simulation, Fabrication, and Characterization of a 10-2 Class Si-Nanowire Thermoelectric Generator for IoT Applications M Tomita, S Oba, Y Himeda, R Yamato, K Shima, T Kumada, M Xu, ...
IEEE Transactions on Electron Devices 65 (11), 5180-5188, 2018
86 2018 Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology K Nishiguchi, A Fujiwara, Y Ono, H Inokawa, Y Takahashi
Applied physics letters 88 (18), 2006
85 2006 A multiple-valued logic with merged single-electron and MOS transistors H Inokawa, A Fujiwara, Y Takahashi
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
83 2001 A 0.5 V SIMOX-MTCMOS circuit with 200 ps logic gate T Douseki, S Shigematsu, Y Tanabe, M Harada, H Inokawa, T Tsuchiya
1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical …, 1996
82 1996 Evaluation of a copper metallization process and the electrical characteristics of copper-interconnected quarter-micron CMOS N Awaya, H Inokawa, E Yamamoto, Y Okazaki, M Miyake, Y Arita, ...
IEEE Transactions on Electron Devices 43 (8), 1206-1212, 1996
80 1996 Binary adders of multigate single-electron transistors: Specific design using pass-transistor logic Y Ono, H Inokawa, Y Takahashi
IEEE Transactions on nanotechnology 1 (2), 93-99, 2002
75 2002 Multipeak negative-differential-resistance device by combining single-electron and metal–oxide–semiconductor transistors H Inokawa, A Fujiwara, Y Takahashi
Applied Physics Letters 79 (22), 3618-3620, 2001
61 2001 
Akira FujiwaraNTTZweryfikowany adres z lab.ntt.co.jp