GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
496 2008 Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 2009
321 2009 Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 2007
129 2007 Performance enhancement of n-channel inversion type InxGa1− xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer AM Sonnet, CL Hinkle, MN Jivani, RA Chapman, GP Pollack, RM Wallace, ...
Applied Physics Letters 93 (12), 2008
74 2008 Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics CL Hinkle, AM Sonnet, M Milojevic, FS Aguirre-Tostado, HC Kim, J Kim, ...
Applied Physics Letters 93 (11), 2008
66 2008 Impact of semiconductor and interface-state capacitance on metal/high-k/GaAs capacitance–voltage characteristics AM Sonnet, CL Hinkle, D Heh, G Bersuker, EM Vogel
IEEE transactions on electron devices 57 (10), 2599-2606, 2010
58 2010 Extraction of the Effective Mobility ofMOSFETs CL Hinkle, AM Sonnet, RA Chapman, EM Vogel
IEEE electron device letters 30 (4), 316-318, 2009
51 2009 Deposition of HfO2 on InAs by atomic-layer deposition D Wheeler, LE Wernersson, L Fröberg, C Thelander, A Mikkelsen, ...
Microelectronic Engineering 86 (7-9), 1561-1563, 2009
45 2009 Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, ...
Microelectronic engineering 88 (7), 1083-1086, 2011
34 2011 Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS transactions 25 (6), 113, 2009
33 2009 Surface studies of III-V materials: oxidation control and device implications C Hinkle, M Milojevic, A Sonnet, H Kim, J Kim, EM Vogel, RM Wallace
ECS Transactions 19 (5), 387, 2009
33 2009 A stand-alone, physics-based, measurement-driven model and simulation tool for random telegraph signals originating from experimentally identified MOS gate-oxide defects M Nour, Z Çelik-Butler, A Sonnet, FC Hou, S Tang, G Mathur
IEEE Transactions on Electron Devices 63 (4), 1428-1436, 2016
19 2016 On the calculation of effective electric field in In0. 53Ga0. 47As surface channel metal-oxide-semiconductor field-effect-transistors AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, KK Thomas, ...
Applied Physics Letters 98 (19), 2011
11 2011 High-k oxide growth on III-V surfaces: Chemical bonding and MOSFET performance C Hinkle, B Brennan, S McDonnell, M Milojevic, A Sonnet, D Zhernokletov, ...
ECS Transactions 35 (3), 403, 2011
10 2011 Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO2 M Nour, Z Çelik‐Butler, A Sonnet, FC Hou, S Tang
Electronics Letters 51 (20), 1610-1611, 2015
9 2015 Analysis of Compressively Strained GaInAsP–InP Quantum-Wire Electro-Absorption Modulators AM Sonnet, MA Khayer, A Haque
IEEE journal of quantum electronics 43 (12), 1198-1203, 2007
4 2007 A scalable random telegraph signal simulation based on experimentally—Identified gate oxide defects MA Nour, A Rouf, Z Çelik-Butler, FC Hou, S Tang, A Sonnet, G Mathur
2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015
3 2015 Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs E Vogel, A Sonnet, R Galatage, M Milojevic, C Hinkle, RM Wallace
ECS Transactions 28 (1), 209, 2010
3 2010 Extraction of the effective mobility of ${rm In} &underscore;{0.53}{rm Ga} &underscore;{0.47}{rm As} $ MOSFETs C Hinkle, A Sonnet, R Chapman, EM Vogel
IEEE Electron Device Lett. 30 (4), 316-318, 2009
3 2009 Fabrication and Characterization of III-V Metal-oxide-semiconductor AM Sonnet
University of Texas at Dallas, 2010
2 2010 