High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling S Bangsaruntip, GM Cohen, A Majumdar, Y Zhang, SU Engelmann, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
636 2009 MM Frank, GD Wilk, D Starodub, T Gustafsson, E Garfunkel, YJ Chabal, ...
Applied Physics Letters 86 (15), 152904, 2005
414 2005 Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges EP Gusev, V Narayanan, MM Frank
IBM Journal of Research and Development 50 (4.5), 387-410, 2006
388 2006 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide NA Bojarczuk Jr, C Cabral Jr, EA Cartier, MM Frank, EP Gousev, S Guha, ...
US Patent 7,242,055, 2007
366 2007 Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature nanotechnology 8 (10), 748-754, 2013
300 2013 Absence of magnetism in hafnium oxide films DW Abraham, MM Frank, S Guha
Applied Physics Letters 87 (25), 252502, 2005
273 2005 High- MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
266 2010 Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono-and dithiols B De Boer, MM Frank, YJ Chabal, W Jiang, E Garfunkel, Z Bao
Langmuir 20 (5), 1539-1542, 2004
254 2004 Germanium channel MOSFETs: Opportunities and challenges H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong
IBM Journal of Research and Development 50 (4.5), 377-386, 2006
248 2006 From atoms to crystallites: adsorption on oxide-supported metal particles (vol 2, pg 3723, 2000) M Frank, M Baumer
PHYSICAL CHEMISTRY CHEMICAL PHYSICS 2 (18), 4265-4265, 2000
241 * 2000 From atoms to crystallites: adsorption on oxide-supported metal particles M Frank, M Bäumer
Physical Chemistry Chemical Physics 2 (17), 3723-3737, 2000
228 2000 Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides MM Frank, YJ Chabal, GD Wilk
Applied physics letters 82 (26), 4758-4760, 2003
204 2003 Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon NV Nguyen, AV Davydov, D Chandler-Horowitz, MM Frank
Applied Physics Letters 87 (19), 192903, 2005
191 2005 Hafnium oxide gate dielectrics on sulfur-passivated germanium MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ...
Applied physics letters 89 (11), 112905, 2006
182 2006 Synthesis and characterization of conjugated mono-and dithiol oligomers and characterization of their self-assembled monolayers B De Boer, H Meng, DF Perepichka, J Zheng, MM Frank, YJ Chabal, ...
Langmuir 19 (10), 4272-4284, 2003
181 2003 Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon MM Frank, YJ Chabal, ML Green, A Delabie, B Brijs, GD Wilk, MY Ho, ...
Applied physics letters 83 (4), 740-742, 2003
157 2003 Interaction of rhodium with hydroxylated alumina model substrates J Libuda, M Frank, A Sandell, S Andersson, PA Brühwiler, M Bäumer, ...
Surface science 384 (1-3), 106-119, 1997
143 1997 Surface reactivity of Pd nanoparticles supported on polycrystalline substrates as compared to thin film model catalysts: infrared study of CO adsorption S Bertarione, D Scarano, A Zecchina, V Johánek, J Hoffmann, ...
The Journal of Physical Chemistry B 108 (11), 3603-3613, 2004
135 2004 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
128 2011 Fundamental aspects of HfO2 -based high-k metal gate stack reliability and implications on tinv -scaling E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, ...
2011 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2011
127 2011 