Artykuły udostępnione publicznie: - Hugh BarnabyWięcej informacji
Niedostępne w żadnym miejscu: 30
SiO2 based conductive bridging random access memory
W Chen, S Tappertzhofen, HJ Barnaby, MN Kozicki
Journal of Electroceramics 39, 109-131, 2017
Upoważnienia: US Department of Defense, German Research Foundation
Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells
JL Taggart, Y Gonzalez-Velo, D Mahalanabis, A Mahmud, HJ Barnaby, ...
IEEE Transactions on Nuclear Science 61 (6), 2985-2990, 2014
Upoważnienia: US Department of Energy
Displacement damage in bipolar junction transistors: Beyond Messenger-Spratt
HJ Barnaby, RD Schrimpf, KF Galloway, X Li, J Yang, C Liu
IEEE Transactions on Nuclear Science 64 (1), 149-155, 2016
Upoważnienia: US National Aeronautics and Space Administration, National Natural Science …
Evaluation of radiation effects in RRAM-based neuromorphic computing system for inference
Z Ye, R Liu, JL Taggart, HJ Barnaby, S Yu
IEEE Transactions on Nuclear Science 66 (1), 97-103, 2018
Upoważnienia: US Department of Defense
Dependence of ideality factor in lateral PNP transistors on surface carrier concentration
X Li, J Yang, HJ Barnaby, KF Galloway, RD Schrimpf, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 64 (6), 1549-1553, 2017
Upoważnienia: National Natural Science Foundation of China
Single-event gate rupture hardened structure for high-voltage super-junction power MOSFETs
K Muthuseenu, HJ Barnaby, KF Galloway, AE Koziukov, TA Maksimenko, ...
IEEE Transactions on Electron Devices 68 (8), 4004-4009, 2021
Upoważnienia: US Department of Defense
Low-temperature characterization of Cu–Cu: silica-based programmable metallization cell
W Chen, N Chamele, Y Gonzalez-Velo, HJ Barnaby, MN Kozicki
IEEE Electron Device Letters 38 (9), 1244-1247, 2017
Upoważnienia: US Department of Defense
Hydrogen soaking, displacement damage effects, and charge yield in gated lateral bipolar junction transistors
X Li, J Yang, DM Fleetwood, C Liu, Y Wei, HJ Barnaby, KF Galloway
IEEE Transactions on Nuclear Science 65 (6), 1271-1276, 2018
Upoważnienia: National Natural Science Foundation of China
Hydrogen limits for total dose and dose rate response in linear bipolar circuits
PC Adell, B Rax, IS Esqueda, HJ Barnaby
IEEE Transactions on Nuclear Science 62 (6), 2476-2481, 2015
Upoważnienia: US National Aeronautics and Space Administration
Layout dependence of total ionizing dose effects on 12-nm bulk FinFET core digital structures
T Wallace, M Spear, A Privat, J Neuendank, G Irumva, D Wilson, ...
IEEE Transactions on Nuclear Science 70 (4), 620-626, 2022
Upoważnienia: US Department of Energy, US Department of Defense
Total dose effects on negative and positive low-dropout linear regulators
A Privat, PW Davis, HJ Barnaby, PC Adell
IEEE Transactions on Nuclear Science 67 (7), 1332-1338, 2020
Upoważnienia: US National Aeronautics and Space Administration
In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment
JL Taggart, W Chen, Y Gonzalez-Velo, HJ Barnaby, K Holbert, MN Kozicki
IEEE transactions on nuclear science 65 (1), 192-199, 2017
Upoważnienia: US Department of Defense
Non-linear coupling effects in fully depleted SOI transistors
M Spear, HJ Barnaby, T Wallace, J Solano, O Forman, D Wilson, ...
IEEE Transactions on Nuclear Science 70 (4), 434-441, 2023
Upoważnienia: US Department of Defense, US National Aeronautics and Space Administration
Total Ionizing Dose Effects on Multistate HfOₓ-Based RRAM Synaptic Array
X Han, A Privat, KE Holbert, J Seo, S Yu, HJ Barnaby
IEEE Transactions on Nuclear Science 68 (5), 756-761, 2021
Upoważnienia: US Department of Defense
Simulation of transistor-level radiation effects on system-level performance parameters
AF Witulski, N Mahadevan, J Kauppila, G Karsai, A Sternberg, ...
IEEE Transactions on Nuclear Science 66 (7), 1634-1641, 2019
Upoważnienia: US National Aeronautics and Space Administration
Evaluation of single event effects in SRAM and RRAM based neuromorphic computing system for inference
Z Ye, R Liu, H Barnaby, S Yu
2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019
Upoważnienia: US Department of Defense
BJTs in space: ELDRS experiment on NASA space environment testbed
AR Benedetto, HJ Barnaby, C Cook, MJ Campola, A Tender
2021 IEEE Radiation Effects Data Workshop (REDW), 1-5, 2021
Upoważnienia: US Department of Energy, US Department of Defense, US National Aeronautics …
Neutron displacement damage in bipolar junction transistors isolated from an integrated circuit
JM Young, S Banerjee, X Gao, H Barnaby, L Musson, T Buchheit
IEEE Transactions on Nuclear Science, 2024
Upoważnienia: US Department of Energy
Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation
A Privat, HJ Barnaby, BS Tolleson, K Muthuseenu, PC Adell
Microelectronics Reliability 113, 113947, 2020
Upoważnienia: US National Aeronautics and Space Administration
Impact ionization and interface trap generation in 28-nm MOSFETs at cryogenic temperatures
X Yan, H Wang, H Barnaby, IS Esqueda
IEEE Transactions on Device and Materials Reliability 18 (3), 456-462, 2018
Upoważnienia: US Department of Defense
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