| Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ... Applied Physics Letters 101 (18), 2012 | 135 | 2012 |
| Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts S Gupta, P Paramahans Manik, R Kesh Mishra, A Nainani, MC Abraham, ... Journal of Applied Physics 113 (23), 2013 | 126 | 2013 |
| Multilayer CVD-Graphene and MoS₂ Ethanol Sensing and Characterization Using Kretschmann-Based SPR PS Menon, NA Jamil, GS Mei, ARM Zain, DW Hewak, CC Huang, ... IEEE journal of the electron devices society 8, 1227-1235, 2020 | 28 | 2020 |
| ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts P Paramahans, S Gupta, RK Mishra, N Agarwal, A Nainani, Y Huang, ... 2012 Symposium on VLSI Technology (VLSIT), 83-84, 2012 | 23 | 2012 |
| Chalcogen-assisted enhanced atomic orbital interaction at TMD–Metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs J Kumar, G Sheoran, HB Variar, R Mishra, H Kuruva, A Meersha, A Mishra, ... IEEE Transactions on Electron Devices 67 (2), 717-724, 2020 | 18 | 2020 |
| Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering J Kumar, G Sheoran, R Mishra, S Raghavan, M Shrivastava IEEE Transactions on Electron Devices 67 (1), 383-388, 2019 | 13 | 2019 |
| H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors J Kumar, RK Mishra, S Raghavan, M Shrivastava arXiv preprint arXiv:1901.02148, 2019 | 4 | 2019 |
| Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium PP Manik, RK Mishra, U Ganguly, S Lodha 72nd Device Research Conference, 117-118, 2014 | 4 | 2014 |
| Nickel germanide with rare earth interlayers for Ge CMOS applications RK Mishra, U Ganguly, S Ganguly, S Lodha, A Nainani, MC Abraham 2013 IEEE International Conference of Electron Devices and Solid-state …, 2013 | 2 | 2013 |
| Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors J Kumar, RK Mishra, S Raghavan, M Shrivastava arXiv preprint arXiv:1901.02147, 2019 | | 2019 |
| Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs-Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs JK Ansh, G Sheoran, HB Variar, RK Mishra, H Kuruva, A Meersha, ... | | |
Prashanth Paramahans ManikIndian Institute of Technology Bombay