High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ...
Nature communications 3 (1), 1011, 2012
1787 2012 Two-dimensional semiconductors for transistors M Chhowalla, D Jena, H Zhang
Nature Reviews Materials 1 (11), 1-15, 2016
1468 2016 Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
1343 2018 High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ...
Advanced materials 24 (43), 5832, 2012
1186 2012 Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 780, 2012
1161 2012 Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee
Nano letters 13 (5), 1983-1990, 2013
1111 2013 Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee
Physical Review X 4 (3), 031005, 2014
954 2014 Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ...
ACS nano 7 (2), 1072-1080, 2013
909 2013 Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena
Science 327 (5961), 60-64, 2010
875 2010 Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 2007
843 2007 High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
ACS nano 7 (6), 5446-5452, 2013
575 2013 Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering D Jena, A Konar
Physical review letters 98 (13), 136805, 2007
527 2007 Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ...
Applied Physics Letters 106 (11), 2015
522 2015 Charge scattering and mobility in atomically thin semiconductors N Ma, D Jena
Physical Review X 4 (1), 011043, 2014
511 2014 InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
432 2012 Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena
Applied Physics Letters 109 (21), 2016
410 2016 High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ...
Applied Physics Letters 104 (20), 2014
403 2014 Polarization effects in semiconductors: from ab initio theory to device applications D Jena
Springer Science & Business Media, 2008
385 2008 Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ...
Nano letters 15 (9), 5791-5798, 2015
382 2015 Effect of high- A Konar, T Fang, D Jena
Physical Review B—Condensed Matter and Materials Physics 82 (11), 115452, 2010
372 2010