Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model S Yu, X Guan, HSP Wong
Applied Physics Letters 99 (6), 2011
497 2011 On the switching parameter variation of metal-oxide RRAM—Part I: Physical modeling and simulation methodology X Guan, S Yu, HSP Wong
IEEE Transactions on electron devices 59 (4), 1172-1182, 2012
392 2012 A SPICE compact model of metal oxide resistive switching memory with variations X Guan, S Yu, HSP Wong
IEEE electron device letters 33 (10), 1405-1407, 2012
316 2012 On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization S Yu, X Guan, HSP Wong
2011 International Electron Devices Meeting, 17.3. 1-17.3. 4, 2011
259 2011 On the switching parameter variation of metal oxide RRAM—Part II: Model corroboration and device design strategy S Yu, X Guan, HSP Wong
IEEE Transactions on Electron Devices 59 (4), 1183-1188, 2012
251 2012 High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...
2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014
197 2014 Verilog-A compact model for oxide-based resistive random access memory (RRAM) Z Jiang, S Yu, Y Wu, JH Engel, X Guan, HSP Wong
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
161 2014 First-principles investigation on bonding formation and electronic structure of metal-graphene contacts Q Ran, M Gao, X Guan, Y Wang, Z Yu
Applied Physics Letters 94 (10), 2009
124 2009 Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length J Luo, L Wei, CS Lee, AD Franklin, X Guan, E Pop, DA Antoniadis, ...
IEEE transactions on electron devices 60 (6), 1834-1843, 2013
93 2013 A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl
Applied Physics Letters 100 (4), 2012
88 2012 Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation S Yu, X Guan, HSP Wong
2012 International Electron Devices Meeting, 26.1. 1-26.1. 4, 2012
62 2012 Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors J Kang, Y He, J Zhang, X Yu, X Guan, Z Yu
Applied Physics Letters 96 (25), 2010
40 2010 Complex band structures: From parabolic to elliptic approximation X Guan, D Kim, KC Saraswat, HSP Wong
IEEE electron device letters 32 (9), 1296-1298, 2011
38 2011 Molecular dynamics study of the switching mechanism of carbon-based resistive memory Y He, J Zhang, X Guan, L Zhao, Y Wang, H Qian, Z Yu
IEEE Transactions on Electron Devices 57 (12), 3434-3441, 2010
34 2010 InGaSb: Single channel solution for realizing III–V CMOS Z Yuan, A Nainani, A Kumar, X Guan, BR Bennett, JB Boos, MG Ancona, ...
2012 Symposium on VLSI Technology (VLSIT), 185-186, 2012
32 2012 Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in -Based Unipolar Resistive Memory L Zhao, J Zhang, Y He, X Guan, H Qian, Z Yu
IEEE Electron Device Letters 32 (5), 677-679, 2011
29 2011 Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method X Guan, M Zhang, Q Liu, Z Yu
2007 IEEE International Electron Devices Meeting, 761-764, 2007
21 2007 Supercell approach in tight-binding calculation of Si and Ge nanowire bandstructures G Xi-Meng, Y Zhi-Ping
Chinese Physics Letters 22, 2651, 2005
21 2005 Recent progress of resistive switching random access memory (RRAM) Y Wu, S Yu, X Guan, HSP Wong
2012 IEEE Silicon Nanoelectronics Workshop (SNW), 1-4, 2012
18 2012 Modeling of schottky and ohmic contacts between metal and graphene nanoribbons using extended hückel theory (EHT)-based NEGF method X Guan, Q Ran, M Zhang, Z Yu, HSP Wong
2008 IEEE International Electron Devices Meeting, 1-4, 2008
13 2008