GaN-on-Si power technology: Devices and applications KJ Chen, O Häberlen, A Lidow, C lin Tsai, T Ueda, Y Uemoto, Y Wu
IEEE Transactions on Electron Devices 64 (3), 779-795, 2017
1478 2017 The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
1255 2018 From clusters to bulk: A relativistic density functional investigation on a series of gold clusters OD Häberlen, SC Chung, M Stener, N Rösch
The Journal of chemical physics 106 (12), 5189-5201, 1997
426 1997 Quenching of magnetic moments by ligand-metal interactions in nanosized magnetic metal clusters DA van Leeuwen, JM Van Ruitenbeek, LJ De Jongh, A Ceriotti, ...
Physical review letters 73 (10), 1432, 1994
240 1994 Threshold voltage instability in p-GaN gate AlGaN/GaN HFETs L Sayadi, G Iannaccone, S Sicre, O Häberlen, G Curatola
IEEE Transactions on Electron Devices 65 (6), 2454-2460, 2018
225 2018 A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method: application to AuH, AuCl and Au2 OD Häberlen, N Rösch
Chemical physics letters 199 (5), 491-496, 1992
218 1992 Stability of main-group element-centered gold cluster cations OD Haeberlen, H Schmidbaur, N Roesch
Journal of the American Chemical Society 116 (18), 8241-8248, 1994
144 1994 Effect of phosphine substituents in gold (I) complexes: a theoretical study of MeAuPR3, R= H, Me, Ph OD Haeberlen, N Roesch
The Journal of Physical Chemistry 97 (19), 4970-4973, 1993
125 1993 Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs G Verzellesi, L Morassi, G Meneghesso, M Meneghini, E Zanoni, ...
IEEE Electron Device Letters 35 (4), 443-445, 2014
119 2014 C. l. Tsai, T. Ueda, Y. Uemoto, and Y. Wu,“GaN-on-Si power technology: Devices and applications,” KJ Chen, O Häberlen, A Lidow
IEEE Transactions on Electron Devices 64 (3), 779-795, 2017
115 2017 On the Origin of the M Guacci, M Heller, D Neumayr, D Bortis, JW Kolar, G Deboy, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (2), 679-694, 2018
111 2018 Relevance of relativistic exchange-correlation functionals and of finite nuclei in molecular density-functional calculations M Mayer, OD Häberlen, N Rösch
Physical Review A 54 (6), 4775, 1996
102 1996 Method for manufacturing a semiconductor component G Deboy, W Friza, O Häberlen, M Rüb, H Strack
US Patent 6,649,459, 2003
94 2003 Semiconductor device O Haeberlen, J Krumrey, F Hirler, W Rieger
US Patent 8,022,474, 2011
81 2011 Degradation mechanisms of GaN HEMTs with p-type gate under forward gate bias overstress M Ruzzarin, M Meneghini, A Barbato, V Padovan, O Haeberlen, ...
IEEE Transactions on Electron Devices 65 (7), 2778-2783, 2018
77 2018 Perspective of loss mechanisms for silicon and wide band-gap power devices G Deboy, O Haeberlen, M Treu
CPSS Transactions on Power electronics and applications 2 (2), 89-100, 2017
76 2017 Asymmetric localization of titanium in carbon molecule (C28) BI Dunlap, OD Haeberlen, N Roesch
The Journal of Physical Chemistry 96 (23), 9095-9097, 1992
74 1992 Relativistic density‐functional studies of naked and ligated gold clusters OD Häberlen, SC Chung, N Rösch, N Rösch
International Journal of Quantum Chemistry 52 (S28), 595-610, 1994
71 1994 Si, SiC and GaN power devices: An unbiased view on key performance indicators G Deboy, M Treu, O Häberlen, D Neumayr
2016 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2016
69 2016 Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies R Rupp, T Laska, O Häberlen, M Treu
2014 IEEE International Electron Devices Meeting, 2.3. 1-2.3. 4, 2014
65 2014 