| Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides M Turowski, A Raman, RD Schrimpf IEEE transactions on nuclear science 51 (6), 3166-3171, 2004 | 186 | 2004 |
| Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ... IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017 | 101 | 2017 |
| Simulation of nonequilibrium thermal effects in power LDMOS transistors A Raman, DG Walker, TS Fisher Solid-State Electronics 47 (8), 1265-1273, 2003 | 86 | 2003 |
| Fast, automated thermal simulation of three-dimensional integrated circuits P Wilkerson, A Raman, M Turowski The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2004 | 76 | 2004 |
| An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ... IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007 | 71 | 2007 |
| Mixed-mode simulation and analysis of digital single event transients in fast CMOS ICs M Turowski, A Raman, G Jablonski Mixed Design of Integrated Circuits and Systems, 2007. MIXDES'07. 14th …, 2007 | 63 | 2007 |
| Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ... IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009 | 51 | 2009 |
| Long wavelength infrared imaging under ambient thermal radiation via an all-silicon metalens L Huang, Z Coppens, K Hallman, Z Han, KF Böhringer, N Akozbek, ... Optical Materials Express 11 (9), 2907-2914, 2021 | 44 | 2021 |
| Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ... IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009 | 44 | 2009 |
| Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, RA Reed, ... IEEE Transactions on Nuclear Science 67 (1), 135-139, 2019 | 35 | 2019 |
| Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ... IEEE transactions on nuclear science 53 (6), 3203-3209, 2006 | 35 | 2006 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 29 | 2016 |
| Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs M Turowski, JA Pellish, KA Moen, A Raman, JD Cressler, RA Reed, G Niu IEEE Transactions on Nuclear Science 57 (6), 3342-3348, 2010 | 29 | 2010 |
| An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ... IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013 | 26 | 2013 |
| Simulating the radiation response of GaAs solar cells using a defect-based TCAD model M Turowski, T Bald, A Raman, A Fedoseyev, JH Warner, CD Cress, ... IEEE Transactions on Nuclear Science 60 (4), 2477-2485, 2013 | 25 | 2013 |
| Accurate modeling of single-event transients in a SiGe voltage reference circuit KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ... IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011 | 24 | 2011 |
| Digital single event transient pulse generation and propagation in fast bulk CMOS ICs M Turowski, D Mavis, A Raman, P Eaton 2006 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2006 | 18 | 2006 |
| Physics-based modeling of nonplanar nanodevices (FinFETs) and their response to radiation M Turowski, A Raman, W Xiong Proceedings of the 18th International Conference Mixed Design of Integrated …, 2011 | 16 | 2011 |
| Addressing challenges in device-circuit modeling for extreme environments of space A Raman, M Turowski, A Fedoseyev, JD Cressler Semiconductor Device Research Symposium, 2007 International, 2007 | 16 | 2007 |
| Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments M Turowski, A Raman, A Fedoseyev 2009 European Conference on Radiation and Its Effects on Components and …, 2009 | 15 | 2009 |
Marek TurowskiAlphacore Inc., USAZweryfikowany adres z ieee.org
