| Enhancement of the external quantum efficiency of a silicon quantum dot light‐emitting diode by localized surface plasmons BH Kim, CH Cho, JS Mun, MK Kwon, TY Park, JS Kim, CC Byeon, J Lee, ... Advanced Materials 20 (16), 3100-3104, 2008 | 148 | 2008 |
| Near room temperature droplet epitaxy for fabrication of InAs quantum dots JS Kim, N Koguchi Applied physics letters 85 (24), 5893-5895, 2004 | 143 | 2004 |
| Ordering of high-quality InAs quantum dots on defect-free nanoholes JS Kim, M Kawabe, N Koguchi Applied physics letters 88 (7), 2006 | 60 | 2006 |
| Narrowband-to-broadband switchable and polarization-insensitive terahertz metasurface absorber enabled by phase-change material SH Badri, MM Gilarlue, S SaeidNahaei, JS Kim Journal of Optics 24 (2), 025101, 2022 | 59 | 2022 |
| Effects of doping with Al, Ga, and In on structural and optical properties of ZnO nanorods grown by hydrothermal method S Kim, G Nam, H Park, H Yoon, S Lee, JS Kim, JS Kim, DY Kim, SO Kim, ... Bulletin of the Korean Chemical Society 34 (4), 1205-1211, 2013 | 57 | 2013 |
| Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma MS Kim, TH Kim, GS Kim, HY Choi, MY Cho, SM Jeon, JS Kim, JS Kim, ... Journal of crystal growth 311 (14), 3568-3572, 2009 | 51 | 2009 |
| GaAs quantum dots with a high density on a GaAs (111) A substrate JS Kim, MS Jeong, CC Byeon, DK Ko, J Lee, JS Kim, IS Kim, N Koguchi Applied physics letters 88 (24), 2006 | 48 | 2006 |
| Effects of high potential barrier on InAs quantum dots and wetting layer JS Kim, PW Yu, JY Leem, M Jeon, SK Noh, JI Lee, GH Kim, SK Kang, ... Journal of applied physics 91 (8), 5055-5059, 2002 | 46 | 2002 |
| Thickness dependence of properties of ZnO thin films on porous silicon grown by plasma-assisted molecular beam epitaxy MS Kim, KG Yim, JY Leem, S Kim, G Nam, DY Lee, JS Kim, JS Kim Journal of the Korean Physical Society 59 (3), 2354-2361, 2011 | 45 | 2011 |
| Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer JS Kim, PW Yu, JY Leem, JI Lee, SK Noh, JS Kim, SM Kim, JS Son, ... Applied Physics Letters 78 (21), 3247-3249, 2001 | 39 | 2001 |
| Efficiency limit of InAs/GaAs quantum dot solar cells attributed to quantum dot size effects RP Smith, JS Kim, SK Noh, SJ Lee, CL Lee, JY Leem Solar Energy Materials and Solar Cells 155, 70-78, 2016 | 36 | 2016 |
| Height-controlled InAs quantum dots by using a thin InGaAs layer JS Kim, PW Yu, JI Lee, JS Kim, SG Kim, JY Leem, M Jeon Applied physics letters 80 (25), 4714-4716, 2002 | 34 | 2002 |
| Effects of cooling rate and post-heat treatment on properties of ZnO thin films deposited by sol–gel method MS Kim, KG Yim, DY Lee, JS Kim, JS Kim, JS Son, JY Leem Applied surface science 257 (21), 9019-9023, 2011 | 33 | 2011 |
| Nanocrystalline ZnO thin films grown on porous silicon by sol-gel method and effects of post-annealing MS Kim, KG Yim, JY Leem, S Kim, G Nam, SO Kim, DY Lee, JS Kim, ... Journal of the Korean Physical Society 59 (2), 346-352, 2011 | 30 | 2011 |
| Exciton dipole–dipole interaction in a single coupled-quantum-dot structure via polarized excitation H Kim, I Kim, K Kyhm, RA Taylor, JS Kim, JD Song, KC Je, LS Dang Nano letters 16 (12), 7755-7760, 2016 | 29 | 2016 |
| Growth of Si-doped InAs quantum dots and annealing effects on size distribution JS Kim, PW Yu, JY Leem, JI Lee, SK Noh, JS Kim, GH Kim, SK Kang, ... Journal of crystal growth 234 (1), 105-109, 2002 | 29 | 2002 |
| Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure JS Kim, JO Kim, SK Noh, SJ Lee Current Applied Physics 16 (5), 587-592, 2016 | 27 | 2016 |
| Evaluation of the junction’s electric field and the ideality factor of GaAs pn junction solar cells by using photoreflectance spectroscopy CW Sohn, IS Han, RP Smith, JS Kim, SK Noh, H Choi, JY Leem Journal of the Korean Physical Society 64, 1031-1035, 2014 | 27 | 2014 |
| Exfoliation of MoS2 Quantum Dots: Recent Progress and Challenges L Ali, F Subhan, M Ayaz, SS Hassan, CC Byeon, JS Kim, S Bungau Nanomaterials 12 (19), 3465, 2022 | 26 | 2022 |
| Monolithic two-color short-wavelength InGaAs infrared photodetectors using InAsP metamorphic buffers S Park, J Jeon, VM More, RS Lee, Y Seo, M Kim, PD Nguyen, M Kim, ... Applied Surface Science 581, 152421, 2022 | 25 | 2022 |
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