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Sihem TOUMI
Sihem TOUMI
Professeur de physique, Université M'hamed Bouguara Boumerdes
Verifisert e-postadresse på univ-boumerdes.dz
Tittel
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Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes
S Toumi, A Ferhat-Hamida, L Boussouar, A Sellai, Z Ouennoughi, ...
Microelectronic Engineering 86 (3), 303-309, 2009
582009
Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode
Z Ouennoughi, S Toumi, R Weiss
Physica B: Condensed Matter 456, 176-181, 2015
432015
On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution
N Rouag, L Boussouar, S Toumi, Z Ouennoughi, MA Djouadi
Semiconductor science and technology 22 (4), 369, 2007
192007
Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method
S Toumi, Z Ouennoughi, KC Strenger, L Frey
Solid-State Electronics 122, 56-63, 2016
122016
A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact
S Toumi, Z Ouennoughi
Indian Journal of Physics 93, 1155-1162, 2019
102019
Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
S Toumi, Z Ouennoughi, R Weiss
Applied Physics A 127 (9), 661, 2021
62021
Etudes des composants électroniques (cellules solaires, diodes schottky) en utilisant les algorithmes génétiques et le langage VHDL AMS
S Toumi
52018
Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors
S Toumi, Z Ouennoughi, K Murakami
Physica B: Condensed Matter 585, 412125, 2020
32020
Investigation of the Inhomogeneity Phenomenon in the Metal/Semiconductor Interface: Mo/n-type-4H-SiC Schottky Diode
S Toumi
Fundamental Research and Application of Physical Science, 122, 2023
2023
Characteristics and modeling of wide band gap (WBG) power semiconductor
S Toumi
2023
Extraction of solar cell device parameters using vertical optimization and genetic algorithm
Z Ouennoughi, S Toumi, Z Djessas, FA Hamida
2007
Extraction of organic and inorganic solar cell device parameters using vertical optimization and Lambert Wfunction
Z Ouennoughi, A FerhatHamida, N Rouag, S Toumi, L Boussouar
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Artikler 1–12