| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 189 | 2018 |
| The Complementary FET (CFET) for CMOS scaling beyond N3 J Ryckaert, P Schuddinck, P Weckx, G Bouche, B Vincent, J Smith, ... 2018 IEEE Symposium on Vlsi Technology, 141-142, 2018 | 178 | 2018 |
| Novel forksheet device architecture as ultimate logic scaling device towards 2nm P Weckx, J Ryckaert, ED Litta, D Yakimets, P Matagne, P Schuddinck, ... 2019 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2019 | 116 | 2019 |
| Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017 | 115 | 2017 |
| Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates H Kükner, S Khan, P Weckx, P Raghavan, S Hamdioui, B Kaczer, ... IEEE transactions on device and materials reliability 14 (1), 182-193, 2013 | 81 | 2013 |
| Enabling sub-5nm CMOS technology scaling thinner and taller! J Ryckaert, MH Na, P Weckx, D Jang, P Schuddinck, B Chehab, S Patli, ... 2019 IEEE International Electron Devices Meeting (IEDM), 29.4. 1-29.4. 4, 2019 | 79 | 2019 |
| A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ... Microelectronics Reliability 81, 186-194, 2018 | 70 | 2018 |
| Defect-based methodology for workload-dependent circuit lifetime projections-Application to SRAM P Weckx, B Kaczer, M Toledano-Luque, T Grasser, PJ Roussel, H Kukner, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 4.1-3A. 4.7, 2013 | 70 | 2013 |
| Degradation of time dependent variability due to interface state generation M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, M Bina, T Grasser, ... 2013 Symposium on VLSI Technology, T190-T191, 2013 | 68 | 2013 |
| Forksheet FETs for advanced CMOS scaling: forksheet-nanosheet co-integration and dual work function metal gates at 17nm NP space H Mertens, R Ritzenthaler, Y Oniki, B Briggs, BT Chan, A Hikavyy, T Hopf, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 61 | 2021 |
| The impact of sequential-3D integration on semiconductor scaling roadmap A Mallik, A Vandooren, L Witters, A Walke, J Franco, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-31.1. 4, 2017 | 59 | 2017 |
| Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm P Weckx, J Ryckaert, V Putcha, A De Keersgieter, J Boemmels, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2017 | 55 | 2017 |
| Implications of BTI-induced time-dependent statistics on yield estimation of digital circuits P Weckx, B Kaczer, M Toledano-Luque, P Raghavan, J Franco, ... IEEE Transactions on Electron Devices 61 (3), 666-673, 2014 | 55 | 2014 |
| Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology P Weckx, B Kaczer, C Chen, J Franco, E Bury, K Chanda, J Watt, ... 2015 IEEE International Reliability Physics Symposium, 3B. 1.1-3B. 1.6, 2015 | 53 | 2015 |
| Device-, circuit-& block-level evaluation of CFET in a 4 track library P Schuddinck, O Zografos, P Weckx, P Matagne, S Sarkar, Y Sherazi, ... 2019 Symposium on VLSI Technology, T204-T205, 2019 | 50 | 2019 |
| Enabling CMOS scaling towards 3nm and beyond A Mocuta, P Weckx, S Demuynck, D Radisic, Y Oniki, J Ryckaert 2018 IEEE Symposium on VLSI Technology, 147-148, 2018 | 49 | 2018 |
| Integral impact of BTI, PVT variation, and workload on SRAM sense amplifier I Agbo, M Taouil, D Kraak, S Hamdioui, H Kükner, P Weckx, P Raghavan, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (4 …, 2017 | 41 | 2017 |
| Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ... 2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015 | 41 | 2015 |
| A comprehensive study of nanosheet and forksheet SRAM for beyond N5 node MK Gupta, P Weckx, P Schuddinck, D Jang, B Chehab, S Cosemans, ... IEEE Transactions on Electron Devices 68 (8), 3819-3825, 2021 | 36 | 2021 |
| Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories M Toledano-Luque, R Degraeve, B Kaczer, B Tang, PJ Roussel, P Weckx, ... 2012 International Electron Devices Meeting, 9.2. 1-9.2. 4, 2012 | 36 | 2012 |