郭宇铮Yuzheng Guo

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John RobertsonProfessor of Electronics, University of CambridgeVerifisert e-postadresse på eng.cam.ac.uk
Zhaofu ZHANGWuhan University, University of Cambridge, Hong Kong University of Science and TechnologyVerifisert e-postadresse på whu.edu.cn
Xuhao WanRutgers University, Wuhan University, University of CambridgeVerifisert e-postadresse på physics.rutgers.edu
Huan Niu (牛欢)Wuhan UniversityVerifisert e-postadresse på whu.edu.cn
Xiting Wang (王熙婷)Wuhan UniversityVerifisert e-postadresse på whu.edu.cn
Hongfei LiUniversity of CambridgeVerifisert e-postadresse på cam.ac.uk
Dameng LiuState Key Laboratory of Tribology, Tsinghua UniversityVerifisert e-postadresse på tsinghua.edu.cn
Haichang LuBeihang University | University of Cambridge | Peking UniversityVerifisert e-postadresse på buaa.edu.cn
Qingzhong GuiHunan University, Wuhan UniversityVerifisert e-postadresse på hnu.edu.cn
Jun WangWuhan UniversityVerifisert e-postadresse på whu.edu.cn
Stewart ClarkProfessor of Physics, University of DurhamVerifisert e-postadresse på durham.ac.uk
Huanglong LiAssociate Professor (tenured) @ Department of Precision Instrument, Tsinghua UniversityVerifisert e-postadresse på tsinghua.edu.cn
Kai XiDepartment of Materials Science and Metallurgy, University of CambridgeVerifisert e-postadresse på cam.ac.uk
HANG ZHOUPeking University Shenzhen Graduate SchoolVerifisert e-postadresse på pkusz.edu.cn
Feng (Ryan) WangUniversity College LondonVerifisert e-postadresse på ucl.ac.uk
Kechao TangPeking UniversityVerifisert e-postadresse på pku.edu.cn
Paul McIntyreProfessor of Materials Science and Engineering, Stanford UniversityVerifisert e-postadresse på stanford.edu
Lorenzo D'ArsièPhD candidate at the University of CambridgeVerifisert e-postadresse på cam.ac.uk
Qimin QuanRowland Institute at Harvard UniversityVerifisert e-postadresse på rowland.harvard.edu
Shaocong HouProfessor, Wuhan University (Postdoc@Cambridge, Harvard, UMich; PhD@Peking Univ.)Verifisert e-postadresse på pku.edu.cn

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郭宇铮Yuzheng Guo

武汉大学Wuhan University

Verifisert e-postadresse på whu.edu.cn

semiconductor co-design


Tittel Sorter etter sitater Sorter etter år Sorter etter tittel	Sitert av Sitert av	År
Sulfur vacancies in monolayer MoS2 and its electrical contacts D Liu, Y Guo, L Fang, J Robertson Applied Physics Letters 103 (13), 183113, 2013	454	2013
Theoretical insights into the mechanism of selective nitrate‐to‐ammonia electroreduction on single‐atom catalysts H Niu, Z Zhang, X Wang, X Wan, C Shao, Y Guo Advanced Functional Materials 31 (11), 2008533, 2021	421	2021
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017	344	2017
Unraveling the origin of sulfur‐doped Fe‐N‐C single‐atom catalyst for enhanced oxygen reduction activity: effect of iron spin‐state tuning Z Chen, H Niu, J Ding, H Liu, PH Chen, YH Lu, YR Lu, W Zuo, L Han, ... Angewandte Chemie 133 (48), 25608-25614, 2021	276	2021
A durable and pH-universal self-standing MoC–Mo₂C heterojunction electrode for efficient hydrogen evolution reaction W Liu, X Wang, F Wang, K Du, Z Zhang, Y Guo, H Yin, D Wang Nature Communications 12 (1), 6776, 2021	253	2021
Origin of the high work function and high conductivity of MoO3 Y Guo, J Robertson Applied Physics Letters 105 (22), 2014	243	2014
Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures Y Guo, J Robertson Applied physics letters 108 (23), 2016	216	2016
Computational Screening Single-Atom Catalysts Supported on g-CN for N₂ Reduction: High Activity and Selectivity H Niu, X Wang, C Shao, Z Zhang, Y Guo ACS Sustainable Chemistry & Engineering 8 (36), 13749-13758, 2020	211	2020
Single-Atom Rhodium on Defective g-C₃N₄: A Promising Bifunctional Oxygen Electrocatalyst H Niu, X Wan, X Wang, C Shao, J Robertson, Z Zhang, Y Guo ACS Sustainable Chemistry & Engineering 9 (9), 3590-3599, 2021	196	2021
Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts Y Guo, D Liu, J Robertson Applied Physics Letters 106 (17), 2015	196	2015
Calculation of TiO₂ Surface and Subsurface Oxygen Vacancy by the Screened Exchange Functional H Li, Y Guo, J Robertson The Journal of Physical Chemistry C 119 (32), 18160-18166, 2015	185	2015
Synthesis and stabilization of colloidal perovskite nanocrystals by multidentate polymer micelles S Hou, Y Guo, Y Tang, Q Quan ACS applied materials & interfaces 9 (22), 18417-18422, 2017	183	2017
Revealing the oxygen reduction reaction activity origin of single atoms supported on gC 3 N 4 monolayers: a first-principles study H Niu, X Wang, C Shao, Y Liu, Z Zhang, Y Guo Journal of Materials Chemistry A 8 (14), 6555-6563, 2020	178	2020
3D behavior of Schottky barriers of 2D transition-metal dichalcogenides Y Guo, D Liu, J Robertson ACS applied materials & interfaces 7 (46), 25709-25715, 2015	173	2015
Electronic and magnetic properties of Ti2O3, Cr2O3, and Fe2O3 calculated by the screened exchange hybrid density functional Y Guo, SJ Clark, J Robertson Journal of Physics: Condensed Matter 24 (32), 325504, 2012	156	2012
Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5-based ReRAM devices W Kim, S Menzel, DJ Wouters, Y Guo, J Robertson, B Roesgen, R Waser, ... Nanoscale 8 (41), 17774-17781, 2016	150	2016
Liquid metal for high-entropy alloy nanoparticles synthesis G Cao, J Liang, Z Guo, K Yang, G Wang, H Wang, X Wan, Z Li, Y Bai, ... Nature 619 (7968), 73-77, 2023	147	2023
Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ... Science advances 3 (10), e1701661, 2017	143	2017
Materials selection for oxide-based resistive random access memories Y Guo, J Robertson Applied Physics Letters 105 (22), 2014	134	2014
A Feasible Strategy for Identifying Single‐Atom Catalysts Toward Electrochemical NO‐to‐NH₃ Conversion H Niu, Z Zhang, X Wang, X Wan, C Kuai, Y Guo Small 17 (36), 2102396, 2021	131	2021

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