P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
143 2009 Impact strain engineering on gate stack quality and reliability C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
109 2008 Ultraflexible tactile piezoelectric sensor based on low-temperature polycrystalline silicon thin-film transistor technology F Maita, L Maiolo, A Minotti, A Pecora, D Ricci, G Metta, G Scandurra, ...
IEEE sensors journal 15 (7), 3819-3826, 2015
82 2015 Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken
IEEE Transactions on Electron Devices 53 (4), 823-828, 2006
70 2006 Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
69 2011 Bipolar mode operation and scalability of double-gate capacitorless 1T-DRAM cells G Giusi, MA Alam, F Crupi, S Pierro
IEEE transactions on electron devices 57 (8), 1743-1750, 2010
43 2010 Dedicated instrumentation for high sensitivity, low frequency noise measurement systems C Ciofi, G Giusi, G Scandurra, B Neri
Fluctuation and Noise Letters 4 (02), L385-L402, 2004
43 2004 Amperometric biosensor and front-end electronics for remote glucose monitoring by crosslinked PEDOT-glucose oxidase Y Aleeva, G Maira, M Scopelliti, V Vinciguerra, G Scandurra, G Cannata, ...
IEEE Sensors Journal 18 (12), 4869-4878, 2018
39 2018 Junction engineering of 1T-DRAMs G Giusi, G Iannaccone
IEEE electron device letters 34 (3), 408-410, 2013
37 2013 Analytical model for the 1∕ f noise in the tunneling current through metal-oxide-semiconductor structures F Crupi, G Giusi, G Iannaccone, P Magnone, C Pace, E Simoen, C Claeys
Journal of Applied Physics 106 (7), 2009
36 2009 Low-frequency (1/f) noise behavior of locally stressed HfO/sub 2//TiN gate-stack pMOSFETs G Giusi, E Simoen, G Eneman, P Verheyen, F Crupi, K De Meyer, ...
IEEE electron device letters 27 (6), 508-510, 2006
36 2006 Ultra‐low‐noise large‐bandwidth transimpedance amplifier G Giusi, G Cannatà, G Scandurra, C Ciofi
International journal of circuit theory and applications 43 (10), 1455-1473, 2015
32 2015 Performance and reliability of strained-silicon nMOSFETs with SiN cap layer G Giusi, F Crupi, E Simoen, G Eneman, M Jurczak
IEEE transactions on electron devices 54 (1), 78-82, 2006
30 2006 Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2 G Migliato Marega, Z Wang, M Paliy, G Giusi, S Strangio, F Castiglione, ...
ACS nano 16 (3), 3684-3694, 2022
29 2022 Programmable, very low noise current source G Scandurra, G Cannata, G Giusi, C Ciofi
Review of Scientific Instruments 85 (12), 2014
28 2014 Enhanced sensitivity cross-correlation method for voltage noise measurements F Crupi, G Giusi, C Ciofi, C Pace
IEEE Transactions on Instrumentation and Measurement 55 (4), 1143-1147, 2006
27 2006 Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs D Maji, F Crupi, E Amat, E Simoen, B De Jaeger, DP Brunco, CR Manoj, ...
IEEE transactions on electron devices 56 (5), 1063-1069, 2009
25 2009 ESTIMATION ERRORS IN 1/fγ NOISE SPECTRA WHEN EMPLOYING DFT SPECTRUM ANALYZERS G Giusi, G Scandurra, C Ciofi
Fluctuation and Noise Letters 12 (01), 1350007, 2013
24 2013 Multichannel amplifier topologies for high-sensitivity and reduced measurement time in voltage noise measurements G Scandurra, G Giusi, C Ciofi
IEEE Transactions on Instrumentation and Measurement 62 (5), 1145-1153, 2013
24 2013 Full model and characterization of noise in operational amplifier G Giusi, F Crupi, C Pace, P Magnone
IEEE Transactions on Circuits and Systems I: Regular Papers 56 (1), 97-102, 2009
23 2009 