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Jing LI
Jing LI
CEA Leti, Grenoble, France
Verifisert e-postadresse på cea.fr
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Combining the Many-Body GW Formalism with Classical Polarizable Models: Insights on the Electronic Structure of Molecular Solids
J Li, G D’avino, I Duchemin, D Beljonne, X Blase
The Journal of Physical Chemistry Letters 7 (14), 2814-2820, 2016
882016
Host dependence of the electron affinity of molecular dopants
J Li, I Duchemin, OM Roscioni, P Friederich, M Anderson, E Da Como, ...
Materials Horizons 6 (1), 107-114, 2019
792019
Orientation dependent molecular electrostatics drives efficient charge generation in homojunction organic solar cells
Y Dong, VC Nikolis, F Talnack, YC Chin, J Benduhn, G Londi, J Kublitski, ...
Nature communications 11 (1), 4617, 2020
782020
Charge detection in an array of CMOS quantum dots
E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...
Physical Review Applied 14 (2), 024066, 2020
762020
Accurate description of charged excitations in molecular solids from embedded many-body perturbation theory
J Li, G d'Avino, I Duchemin, D Beljonne, X Blase
Physical Review B 97 (3), 035108, 2018
712018
Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunneling
VN Ciriano-Tejel, MA Fogarty, S Schaal, L Hutin, B Bertrand, L Ibberson, ...
PRX Quantum 2 (1), 010353, 2021
662021
Correlated electron-hole mechanism for molecular doping in organic semiconductors
J Li, G d'Avino, A Pershin, D Jacquemin, I Duchemin, D Beljonne, X Blase
Physical Review Materials 1 (2), 025602, 2017
532017
Temperature dependence of perpendicular magnetic anisotropy in CoFeB thin films
Y Fu, I Barsukov, J Li, AM Gonçalves, CC Kuo, M Farle, IN Krivorotov
Applied Physics Letters 108 (14), 2016
432016
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.
R Lavieville, F Triozon, S Barraud, A Corna, X Jehl, M Sanquer, J Li, ...
Nano letters 15 (5), 2958-2964, 2015
372015
Hybrid and constrained resolution-of-identity techniques for coulomb integrals
I Duchemin, J Li, X Blase
Journal of Chemical Theory and Computation 13 (3), 1199-1208, 2017
342017
Spin quintet in a silicon double quantum dot: Spin blockade and relaxation
T Lundberg, J Li, L Hutin, B Bertrand, DJ Ibberson, CM Lee, ...
Physical Review X 10 (4), 041010, 2020
322020
Comparing many-body approaches against the helium atom exact solution
J Li, ND Drummond, P Schuck, V Olevano
SciPost Physics 6 (4), 040, 2019
312019
Helium Atom Excitations by the and Bethe-Salpeter Many-Body Formalism
J Li, M Holzmann, I Duchemin, X Blase, V Olevano
Physical Review Letters 118 (16), 163001, 2017
292017
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
L Bourdet, J Li, J Pelloux-Prayer, F Triozon, M Cassé, S Barraud, ...
Journal of Applied Physics 119 (8), 2016
292016
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L Hutin, B Bertrand, E Chanrion, H Bohuslavskyi, F Ansaloni, TY Yang, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.7. 1-37.7. 4, 2019
282019
Tuning optical properties of dibenzochrysenes by functionalization: a many-body perturbation theory study
N Dardenne, R Cardia, J Li, G Malloci, G Cappellini, X Blase, JC Charlier, ...
The Journal of Physical Chemistry C 121 (44), 24480-24488, 2017
282017
Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene
J Li, HPC Miranda, YM Niquet, L Genovese, I Duchemin, L Wirtz, ...
Physical Review B 92 (7), 075414, 2015
242015
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
R Ezzouch, S Zihlmann, VP Michal, J Li, A Aprá, B Bertrand, L Hutin, ...
Physical Review Applied 16 (3), 034031, 2021
212021
Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
J Li, B Venitucci, YM Niquet
Physical Review B 102 (7), 075415, 2020
182020
Magnetic-phase dependence of the spin carrier mean free path in graphene nanoribbons
J Li, YM Niquet, C Delerue
Physical Review Letters 116 (23), 236602, 2016
182016
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Artikler 1–20