Immunity to device variations in a spiking neural network with memristive nanodevices D Querlioz, O Bichler, P Dollfus, C Gamrat
IEEE transactions on nanotechnology 12 (3), 288-295, 2013
469 2013 Thermoelectric effects in graphene nanostructures P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
215 2015 Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F Mazzamuto, V Hung Nguyen, Y Apertet, C Caër, C Chassat, ...
Physical Review B—Condensed Matter and Materials Physics 83 (23), 235426, 2011
215 2011 The Wigner Monte Carlo method for nanoelectronic devices D Querlioz, P Dollfus, M Mouis
ISTE Wiley: London, UK, 2010
145 2010 Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...
Applied Physics Letters 92 (4), 2008
142 2008 On the ballistic transport in nanometer-scaled DG MOSFETs JS Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
131 2004 Computationally efficient physics-based compact CNTFET model for circuit design S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ...
IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008
116 2008 Negative differential resistance in zigzag-edge graphene nanoribbon junctions V Nam Do, P Dollfus
Journal of Applied Physics 107 (6), 2010
105 2010 On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE transactions on electron devices 54 (9), 2232-2242, 2007
100 2007 P Dollfus
Journal of Applied Physics 82 (8), 3911-3916, 1997
93 1997 Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures V Nam Do, VH Nguyen, P Dollfus, A Bournel
Journal of Applied Physics 104 (6), 2008
91 2008 A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...
IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994
90 1994 Resonant tunnelling diodes based on graphene/h-BN heterostructure VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
89 2012 Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto
IEEE Transactions on Electron Devices 51 (5), 749-756, 2004
86 2004 Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas A Bournel, P Dollfus, P Bruno, P Hesto
The European Physical Journal Applied Physics 4 (1), 1-4, 1998
85 1998 Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
76 2006 Controllable spin-dependent transport in armchair graphene nanoribbon structures VH Nguyen, V Nam Do, A Bournel, VL Nguyen, P Dollfus
Journal of Applied Physics 106 (5), 2009
67 2009 Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation J Saint-Martin, A Bournel, P Dollfus
Solid-State Electronics 50 (1), 94-101, 2006
67 2006 Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si (001) and Si1-xGex on Si1-zGez (001) S Galdin, P Dollfus, V Aubry-Fortuna, P Hesto, HJ Osten
Semiconductor science and technology 15 (6), 565, 2000
67 2000 Bioinspired networks with nanoscale memristive devices that combine the unsupervised and supervised learning approaches D Querlioz, WS Zhao, P Dollfus, JO Klein, O Bichler, C Gamrat
Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale …, 2012
65 2012 