Artikler med mandater om offentlig tilgang - Yue Zhang (张悦)Les mer
Ikke tilgjengelige noe sted: 39
Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction
Y Wang, H Cai, LA de Barros Naviner, Y Zhang, X Zhao, E Deng, JO Klein, ...
IEEE Transactions on Electron Devices 63 (4), 1762-1767, 2016
Mandater: National Natural Science Foundation of China
Compact model of subvolume MTJ and its design application at nanoscale technology nodes
Y Zhang, B Yan, W Kang, Y Cheng, JO Klein, Y Zhang, Y Chen, W Zhao
IEEE Transactions on Electron Devices 62 (6), 2048-2055, 2015
Mandater: National Natural Science Foundation of China
Time-domain computing in memory using spintronics for energy-efficient convolutional neural network
Y Zhang, J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (3), 1193-1205, 2021
Mandater: National Natural Science Foundation of China
Skyrmion-based ultra-low power electric-field-controlled reconfigurable (SUPER) logic gate
Z Zhang, Y Zhu, Y Zhang, K Zhang, J Nan, Z Zheng, Y Zhang, W Zhao
IEEE Electron Device Letters 40 (12), 1984-1987, 2019
Mandater: National Natural Science Foundation of China
Ferrimagnets for spintronic devices: From materials to applications
Y Zhang, X Feng, Z Zheng, Z Zhang, K Lin, X Sun, G Wang, J Wang, J Wei, ...
Applied Physics Reviews 10 (1), 2023
Mandater: National Natural Science Foundation of China
Compact modeling of perpendicular-magnetic-anisotropy double-barrier magnetic tunnel junction with enhanced thermal stability recording structure
G Wang, Y Zhang, J Wang, Z Zhang, K Zhang, Z Zheng, JO Klein, ...
IEEE Transactions on Electron Devices 66 (5), 2431-2436, 2019
Mandater: National Natural Science Foundation of China
Enhanced Spin-Orbit Torque and Multilevel Current-Induced Switching in Heterostructure
Z Zheng, Y Zhang, X Feng, K Zhang, J Nan, Z Zhang, G Wang, J Wang, ...
Physical Review Applied 12 (4), 044032, 2019
Mandater: National Natural Science Foundation of China
Gate-driven pure spin current in graphene
X Lin, L Su, Z Si, Y Zhang, A Bournel, Y Zhang, JO Klein, A Fert, W Zhao
Physical Review Applied 8 (3), 034006, 2017
Mandater: National Natural Science Foundation of China
Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions
A Du, D Zhu, K Cao, Z Zhang, Z Guo, K Shi, D Xiong, R Xiao, W Cai, J Yin, ...
Nature Electronics 6 (6), 425-433, 2023
Mandater: National Natural Science Foundation of China
Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing
K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ...
IEEE Electron Device Letters 41 (6), 928-931, 2020
Mandater: National Natural Science Foundation of China
Reconfigurable bit-serial operation using toggle SOT-MRAM for high-performance computing in memory architecture
J Wang, Y Bai, H Wang, Z Hao, G Wang, K Zhang, Y Zhang, W Lv, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (11), 4535-4545, 2022
Mandater: National Natural Science Foundation of China
Reliability-enhanced separated pre-charge sensing amplifier for hybrid CMOS/MTJ logic circuits
D Zhang, L Zeng, T Gao, F Gong, X Qin, W Kang, Y Zhang, Y Zhang, ...
IEEE Transactions on Magnetics 53 (9), 1-5, 2017
Mandater: National Natural Science Foundation of China
Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale
Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
Mandater: National Natural Science Foundation of China
A multilevel cell for STT-MRAM realized by capping layer adjustment
M Wang, S Peng, Y Zhang, Y Zhang, Y Zhang, Q Zhang, D Ravelosona, ...
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
Mandater: National Natural Science Foundation of China
Coexistence of Magnon-Induced and Rashba-Induced Unidirectional Magnetoresistance in Antiferromagnets
Z Zheng, Y Gu, Z Zhang, X Zhang, T Zhao, H Li, L Ren, L Jia, R Xiao, ...
Nano Letters 23 (14), 6378-6385, 2023
Mandater: A*Star, Singapore
Anomalous Thermal-Assisted Spin–Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory
Z Zheng, Z Zhang, X Feng, K Zhang, Y Zhang, Y He, L Chen, K Lin, ...
ACS nano 16 (5), 8264-8272, 2022
Mandater: US National Science Foundation, National Natural Science Foundation of China
Compact modeling of high spin transfer torque efficiency double-barrier magnetic tunnel junction
G Wang, Y Zhang, Z Zhang, J Nan, Z Zheng, Y Wang, L Zeng, Y Zhang, ...
2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2017
Mandater: National Natural Science Foundation of China
Realization of high spin injection through chiral molecules and its application in logic device
Q Yang, Z Zhang, X Wang, X Wang, Z Shang, F Liu, J Deng, T Zhai, ...
IEEE Electron Device Letters 43 (11), 1862-1865, 2022
Mandater: National Natural Science Foundation of China
Efficient time-domain in-memory computing based on TST-MRAM
J Wang, Y Zhang, C Lian, Y Bai, Z Huang, G Wang, K Zhang, Y Zhang, ...
2020 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2020
Mandater: National Natural Science Foundation of China
A universal compact model for spin-transfer torque-driven magnetization switching in magnetic tunnel junction
X Yang, Y Zhang, P Wang
IEEE Transactions on Electron Devices 69 (11), 6453-6458, 2022
Mandater: National Natural Science Foundation of China
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