| Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors D Rechem, S Latreche, C Gontrand Pramana 72, 587-599, 2009 | 27 | 2009 |
| Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects B Smaani, S Latreche, B Iñiguez Journal of Applied Physics 114 (22), 2013 | 23 | 2013 |
| The effect of short channel on nanoscale SOI MOSFETs D Rechem, S Latreche The African Review of Physics 2 (3), 2009 | 15 | 2009 |
| Photonic band gap grating in He+-implanted lithium niobate waveguides MR Beghoul, B Fougère, A Boudrioua, C Darraud, S Latreche, R Kremer, ... Optical and quantum electronics 39, 333-340, 2007 | 15 | 2007 |
| Design and first characterization of active and slim-edge planar detectors for FEL applications MA Benkechkache, S Latreche, S Ronchin, M Boscardin, L Pancheri, ... IEEE Transactions on Nuclear Science 64 (4), 1062-1070, 2017 | 14 | 2017 |
| Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications GF Dalla Betta, G Batignani, MEA Benkechkache, S Bettarini, G Casarosa, ... 2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC …, 2014 | 9 | 2014 |
| Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications M Lakhdara, S Latreche, C Gontrand Journal of computational and applied mathematics 259, 925-936, 2014 | 9 | 2014 |
| Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs GF Dalla Betta, G Batignani, MA Benkechkache, S Bettarini, G Casarosa, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2016 | 8 | 2016 |
| In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs L Lodola, G Batignani, MA Benkechkache, S Bettarini, G Casarosa, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2016 | 8 | 2016 |
| Nanotube diameter effect on the CNTFET performances D Rechem, S Latreche 5th International Conference: Sciences of Electronic, Technologies of …, 2009 | 8 | 2009 |
| Improvement of the self-heating performance of an advanced SiGe HBT transistor through the Peltier effect A Boulgheb, M Lakhdara, S Latreche IEEE Transactions On Electron Devices 68 (2), 479-484, 2021 | 7 | 2021 |
| First-and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors JC Nunez-Perez, M Lakhdara, M Bouhouche, J Verdier, S Latreche, ... Semiconductor science and Technology 24 (4), 045010, 2009 | 7 | 2009 |
| Double-gate MOSFET model implemented in verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits B Smaani, Y Meraihi, F Nafa, MS Benlatreche, H Akroum, S Latreche International Journal of Electronics and Telecommunications 67 (4), 609-614, 2021 | 6 | 2021 |
| Modelling of parasitic effects induced by electrically active defects in a SiGe HBT M Lakhdara, S Latreche, C Gontrand The European Physical Journal-Applied Physics 43 (1), 55-63, 2008 | 6 | 2008 |
| Analytical drain-current model and surface-potential calculation for junctionless cylindrical surrounding-gate MOSFETs B Smaani, S Labiod, F Nafa, MS Benlatreche, S Latreche Inter J Circ Syst Sig Proc 15, 1394-1399, 2021 | 5 | 2021 |
| Analyze of DGMOS tunneling current through nanoscale gate oxide M Bella, S Latreche Nanosci. Nanotechnol 6, 117-121, 2016 | 5 | 2016 |
| Experimentally verified drain‐current model for variable barrier transistor O Moldovan, F Lime, S Barraud, B Smaani, S Latreche, B Iñiguez Electronics letters 51 (17), 1364-1366, 2015 | 5 | 2015 |
| Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method S Labiod, S Latreche, C Gontrand Microelectronics journal 43 (12), 995-1002, 2012 | 5 | 2012 |
| Combined electromagnetic and drift diffusion models for microwave semiconductor device S Labiod, S Latreche, M Bella, C Gontrand Journal of Electromagnetic Analysis and Applications 3 (10), 423-429, 2011 | 5 | 2011 |
| Mixed-mode optical/electric simulation of silicon lateral PIN photodiode using FDTD method S Labiod, B Smaani, S Tayal, SB Rahi, H Sedrati, S Latreche Silicon 15 (3), 1181-1191, 2023 | 4 | 2023 |
MAYA LAKHDARAMCAVerifisert e-postadresse på umc.edu.dz
