| 193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors A Soltani, HA Barkad, M Mattalah, B Benbakhti, JC De Jaeger, YM Chong, ... Applied Physics Letters 92 (5), 2008 | 121 | 2008 |
| Recent developments of wide-bandgap semiconductor based UV sensors A Benmoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ... Diamond and Related Materials 18 (5-8), 860-864, 2009 | 118 | 2009 |
| LYRA, a solar UV radiometer on Proba2 JF Hochedez, W Schmutz, Y Stockman, U Schühle, A Benmoussa, ... Advances in Space Research 37 (2), 303-312, 2006 | 99 | 2006 |
| Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ... Sensors 16 (3), 273, 2016 | 86 | 2016 |
| Effects of self-heating on performance degradation in AlGaN/GaN-based devices B Benbakhti, A Soltani, K Kalna, M Rousseau, JC De Jaeger IEEE transactions on electron devices 56 (10), 2178-2185, 2009 | 79 | 2009 |
| Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ... Nature communications 10 (1), 4322, 2019 | 68 | 2019 |
| Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: photoemission assessments A BenMoussa, JF Hochedez, R Dahal, J Li, JY Lin, HX Jiang, A Soltani, ... Applied Physics Letters 92 (2), 2008 | 68 | 2008 |
| Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz A Soltani, JC Gerbedoen, Y Cordier, D Ducatteau, M Rousseau, ... IEEE electron device letters 34 (4), 490-492, 2013 | 65 | 2013 |
| AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ... IEEE Electron Device Letters 25 (7), 453-455, 2004 | 59 | 2004 |
| The effect of oxidation on physical properties of porous silicon layers for optical applications P Pirasteh, J Charrier, A Soltani, S Haesaert, L Haji, C Godon, N Errien Applied Surface Science 253 (4), 1999-2002, 2006 | 55 | 2006 |
| Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure N Tiercelin, A Talbi, V Preobrazhensky, P Pernod, V Mortet, K Haenen, ... Applied Physics Letters 93 (16), 2008 | 53 | 2008 |
| Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, Y El Gmili, ... IEEE Sensors Journal 16 (18), 6828-6838, 2016 | 50 | 2016 |
| Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT A Soltani, A BenMoussa, S Touati, V Hoel, JC De Jaeger, J Laureyns, ... Diamond and related materials 16 (2), 262-266, 2007 | 50 | 2007 |
| Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes M Boucherit, A Soltani, E Monroy, M Rousseau, D Deresmes, M Berthe, ... Applied Physics Letters 99 (18), 2011 | 48 | 2011 |
| AlGaN/GaN MISHEMT with hBN as gate dielectric JC Gerbedoen, A Soltani, M Mattalah, M Moreau, P Thevenin, ... Diamond and related materials 18 (5-8), 1039-1042, 2009 | 47 | 2009 |
| New developments on diamond photodetector for VUV solar observations A Benmoussa, A Soltani, K Haenen, U Kroth, V Mortet, HA Barkad, ... Semiconductor science and technology 23 (3), 035026, 2008 | 46 | 2008 |
| Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan Applied Physics Letters 102 (24), 2013 | 44 | 2013 |
| Theoretical and experimental evidence of Fano-like resonances in simple monomode photonic circuits A Mouadili, EH El Boudouti, A Soltani, A Talbi, A Akjouj, ... Journal of Applied Physics 113 (16), 2013 | 44 | 2013 |
| Deep structural analysis of novel BGaN material layers grown by MOVPE S Gautier, G Patriarche, T Moudakir, M Abid, G Orsal, K Pantzas, ... Journal of crystal growth 315 (1), 288-291, 2011 | 44 | 2011 |
| AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz JC Gerbedoen, A Soltani, S Joblot, JC De Jaeger, C Gaquiere, Y Cordier, ... IEEE Transactions on Electron Devices 57 (7), 1497-1503, 2010 | 44 | 2010 |