Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress JF Zhang, S Taylor, W Eccleston
Journal of applied physics 71 (2), 725-734, 1992
155 1992 THEORETICAL INVESTIGATION OF A 2 KA DC NITROGEN ARC IN A SUPERSONIC NOZZLE JF ZHANG, MTC FANG, DB NEWLAND
Journal of Physics D-Applied Physics, 0
151 * Positive bias temperature instability in MOSFETs JF Zhang, W Eccleston
IEEE Transactions on Electron Devices 45 (1), 116-124, 1998
107 1998 A review of the plasma oxidation of silicon and its applications S Taylor, JF Zhang, W Eccleston
Semiconductor science and technology 8 (7), 1426, 1993
98 1993 Hole traps in silicon dioxides. Part I. Properties JF Zhang, CZ Zhao, AH Chen, G Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 51 (8), 1267-1273, 2004
97 2004 A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation JF Zhang, S Taylor, W Eccleston
Journal of applied physics 72 (4), 1429-1435, 1992
82 1992 The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ...
Applied Physics Letters 110 (10), 2017
80 2017 Hole trapping and trap generation in the gate silicon dioxide JF Zhang, HK Sii, G Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 48 (6), 1127-1135, 2001
76 2001 A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress JF Zhang, S Taylor, W Eccleston
Journal of applied physics 71 (12), 5989-5996, 1992
74 1992 NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement Z Ji, L Lin, JF Zhang, B Kaczer, G Groeseneken
IEEE Transactions on Electron Devices 57 (1), 228-237, 2009
69 2009 Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ...
IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008
68 2008 Two-Pulse WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ...
IEEE Electron Device Letters 29 (9), 1043-1046, 2008
64 2008 Real Vth instability of pMOSFETs under practical operation conditions JF Zhang, Z Ji, MH Chang, B Kaczer, G Groeseneken
2007 IEEE International Electron Devices Meeting, 817-820, 2007
61 2007 Hole-traps in silicon dioxides. Part II. Generation mechanism CZ Zhao, JF Zhang, G Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 51 (8), 1274-1280, 2004
59 2004 Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
57 2013 Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ...
IEEE Electron Device Letters 39 (11), 1652-1655, 2018
55 2018 Defects and instabilities in Hf-dielectric/SiON stacks JF Zhang
Microelectronic engineering 86 (7-9), 1883-1887, 2009
55 2009 An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques Z Ji, JF Zhang, MH Chang, B Kaczer, G Groeseneken
IEEE Transactions on Electron Devices 56 (5), 1086-1093, 2009
55 2009 A single pulse charge pumping technique for fast measurements of interface states L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE transactions on electron devices 58 (5), 1490-1498, 2011
54 2011 Traps JF Zhang
Wiley Encyclopedia of Electrical and Electronics Engineering, 1-10, 1999
54 1999 
Wei Dong ZhangProfessor of Nanoelectronics, Liverpool John Moores UniversityVerifisert e-postadresse på ljmu.ac.uk
