Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2 -Based RRAM S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...
Scientific reports 3 (1), 2929, 2013
167 2013 Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
108 2011 Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration? T Ernst, L Duraffourg, C Dupre, E Bernard, P Andreucci, S Bécu, E Ollier, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
85 2008 Ferrocene and porphyrin monolayers on Si (100) surfaces: preparation and effect of linker length on electron transfer K Huang, F Duclairoir, T Pro, J Buckley, G Marchand, E Martinez, ...
ChemPhysChem 10 (6), 963-971, 2009
75 2009 Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ...
Microelectronic Engineering 80, 210-213, 2005
69 2005 Engineering of'Conduction band-Crested Barriers' or'Dielectric Constant-Crested Barriers' in view of their application of floating-gate non-volatile memory devices J Buckley, B DeSalvo, G Ghibaudo, M Gely, JF Damlencourt, AM Papon
Silicon Nanoelectronics Workshop, 2004
63 2004 Accurate analysis of parasitic current overshoot during forming operation in RRAMs S Tirano, L Perniola, J Buckley, J Cluzel, V Jousseaume, C Muller, ...
Microelectronic engineering 88 (7), 1129-1132, 2011
58 2011 Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices J Buckley, B De Salvo, G Ghibaudo, M Gely, JF Damlencourt, F Martin, ...
Solid-state electronics 49 (11), 1833-1840, 2005
46 2005 Role of Ti and Pt electrodes on resistance switching variability of HfO2-based resistive random access memory T Cabout, J Buckley, C Cagli, V Jousseaume, JF Nodin, B De Salvo, ...
Thin Solid Films 533, 19-23, 2013
44 2013 Comparative study of non-polar switching behaviors of NiO- and HfO2 -based Oxide Resistive-RAMs V Jousseaume, A Fantini, JF Nodin, C Guedj, A Persico, J Buckley, ...
2010 IEEE International Memory Workshop, 1-4, 2010
40 2010 Low-Frequency Noise in Oxide-Based Z Fang, HY Yu, JA Chroboczek, G Ghibaudo, J Buckley, B DeSalvo, X Li, ...
IEEE transactions on electron devices 59 (3), 850-853, 2012
39 2012 Investigation of hybrid molecular/silicon memories with redox-active molecules acting as storage media T Pro, J Buckley, K Huang, A Calborean, M GÉly, G Delapierre, ...
IEEE Transactions on Nanotechnology 8 (2), 204-213, 2008
35 2008 Investigation of HfO2 and ZrO2 for resistive random access memory applications A Salaün, H Grampeix, J Buckley, C Mannequin, C Vallée, P Gonon, ...
Thin Solid Films 525, 20-27, 2012
32 2012 Current conduction model for oxide-based resistive random access memory verified by low-frequency noise analysis Z Fang, HY Yu, WJ Fan, G Ghibaudo, J Buckley, B DeSalvo, X Li, ...
IEEE transactions on electron devices 60 (3), 1272-1275, 2013
28 2013 Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications G Molas, M Bocquet, J Buckley, JP Colonna, L Masarotto, H Grampeix, ...
2007 IEEE International Electron Devices Meeting, 453-456, 2007
26 2007 Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture C Le Royer, B Mohamad, J Biscarrat, L Vauche, R Escoffier, J Buckley, ...
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
23 2022 Quantum point contact model of filamentary conduction in resistive switching memories X Lian, S Long, C Cagli, J Buckley, E Miranda, M Liu, J Suñe
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
21 2012 Recent results on organic-based molecular memories B De Salvo, J Buckley, D Vuillaume
Current Applied Physics 11 (2), e49-e57, 2011
20 2011 Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories G Molas, M Bocquet, J Buckley, H Grampeix, M Gély, JP Colonna, ...
Solid-state electronics 51 (11-12), 1540-1546, 2007
20 2007 Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact Y Baines, J Buckley, J Biscarrat, G Garnier, M Charles, W Vandendaele, ...
Scientific Reports 7 (1), 8177, 2017
17 2017 